Magnetoresistance effect device
AssigneeTDK Corporation
InventorKazuhiko Hayashi
Life of this patent
Estimating the term…
Abstract
A magnetoresistance effect device having a basic structure wherein a multi-layer film comprising a unit of magnetic layer/non-magnetic layer/magnetic layer/antiferromagnetic layer, or antiferromagnetic layer/magnetic layer/non-magnetic layer/magnetic layer is formed with a protective film on a surface of the magnetoresistance effect device employing one of a metal, oxide material, nitride material, a mixture of oxide and nitride material, a double-layer film of metal/oxide, a double-layer film of metal/nitride, or a double-layer film of metal/(mixture of oxide and nitride) of film thickness between 2 nm and 7 nm.
Claims8
A magnetoresistance effect device comprising:
- a first magnetic layer;
- a non-magnetic layer mounted on the first magnetic layer;
- a second magnetic layer mounted on the non-magnetic layer;
- an antiferromagnetic layer mounted on the second magnetic layer;
- and
- a protective film formed on the antiferromagnetic layer so as to protect the antiferromagnetic layer, wherein
- the protective film is a metal film having a film thickness of 2 nm or more but less than 5 nm.
A magnetoresistance effect device comprising:
- a first magnetic layer;
- a non-magnetic layer mounted on the first magnetic layer;
- a second magnetic layer mounted on the non-magnetic layer;
- an antiferromagnetic layer mounted on the second magnetic layer;
- and
- a protective film formed on the antiferromagnetic layer so as to protect the antiferromagnetic layer, wherein
- the antiferromagnetic layer compsrises at least one of PtMn, PtPdMn, RhMn or IrMn, or an alloy of these substance, and
- the protective film comprises one or an alloy of two or more selected from the group consisting of Ag, Au, Co, Cr, Cu, Hf, Ir, Mo, Nb, Ni, Os, Pd, Pt, Re, Rh, Ru, Ta, Tc, Ti, V, W, Y, Zn and Zr.
A magnetoresistance effect device comprising:
- an antiferromagnetic layer;
- a non-magnetic layer mounted on the antiferromagnetic layer;
- a second magnetic layer mounted on the non-magnetic layer;
- a first magnetic layer mounted on the second magnetic layer;
- and
- a protective film formed on the first magnetic layer so as to protect the first magnetic layer, wherein
- the protective film is a metal film having a film thickness between 2 nm and 7 nm.
A magnetoresistance effect device comprising;
- an antiferromagnetic layer:
- a non-magnetic layer mounted on the antiferromagnetic layer;
- a second magnetic layer mounted on the non-magnetic layer;
- a first magnetic layer mounted on the second magnetic layer;
- and
- a protective film formed on the first magnetic layer so as to protect the first magnetic layer, wherein
- the antiferromagnetic layer comprises at least one of PtMn, PtPdMn, RhMn or IrMn, or an alloy of these substance, and
- the protective film comprises one or an alloy of two or more selected from the group consisting of Ag, Au, Co, Cr, Cu, Hf, Ir, Mo, Nb, Ni, Os, Pd, Pt, Re, Rh, Ru, Ta, Tc, Ti, V, W, Y, Zn and Zr.
Dependencies are inferred from the claim text.