Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• at least a first substrate;
• a transparent second substrate;
• a liquid crystal layer held between the first substrate and the second substrate:
• a first insulating film having a flattened surface formed over the first substrate;
• stripe-shaped electrodes over the first insulating film;
• and
• a second insulating layer comprising an organic resin including a black dye or carbon black filing gaps between the stripe-shaped electrodes,
• wherein the surfaces of the stripe-shaped electrodes and the surface of the second insulating layer are flattened that both of the surfaces form a same plane, and
• wherein the surfaces of the stripe-shaped electrodes and the surface of the second insulating layer are flattened with a precision of not larger than 20% of a thickness of the electrodes.

A semiconductor device comprising:

• a plurality of semiconductor elements over an insulating surface;
• a first interlayer insulating film having a flattened surface;
• pixel electrodes electrically connected to the semiconductor elements over the first interlayer insulating film;
• a second insulating layer comprising an organic resin including black dye or carbon black filing gaps between the pixel electrodes;
• and
• wherein the surfaces of the pixel electrodes and the surface of the second insulating layer are flattened so that both of the surfaces form a same plane,
• wherein the surfaces of the pixel electrodes and the surface of the second insulating layer are flattened with a precision of not larger than 20% of a thickness of the electrodes, and
• wherein the second insulating layer disposed in gaps between the adjacent electrodes function as a black matrix.

A semiconductor device comprising:

• at least a substrate having a plurality of semiconductor elements formed in matrix;
• a plurality of pixel electrodes respectively connected to the semiconductor elements;
• a liquid crystal held over the substrate;
• a first interlayer insulating film having a flattened surface;
• pixel electrodes electrically connected to the semiconductor elements over the first interlayer insulating film;
• and
• a second insulating layer comprising an organic resin including black dye or carbon black filing gaps between the pixel electrodes,
• wherein the surfaces of the pixel electrodes and the surface of the second insulating layer are flattened so that both of the surfaces form a same plane,
• wherein the surfaces of the pixel electrodes and the surface of the second insulating layer are flattened with a precision of not larger than 20% of a thickness of the electrodes, and
• wherein the second insulating layer disposed in gaps between the adjacent electrodes function as a black matrix.

A display device comprising:

• a plurality of switching elements over an insulating surface;
• an interlayer insulating film comprising organic resin over said plurality of switching elements having a flattened surface by chemical mechanical polishing;
• a plurality of transparent pixel electrodes over said interlayer insulating film;
• an insulating layer comprising an organic resin including black dye or carbon black filling gaps of said pixel electrodes;
• wherein a surface of at least the insulating layer is flattened by chemical mechanical polishing in order that an upper surface of the insulating layer in said gaps is flush with an upper surface of said pixel electrode.

A display device comprising:

• a plurality of switching elements over a silicon wafer;
• an interlayer insulating film comprising organic resin having a flattened surface over said plurality of switching elements;
• a plurality of pixel electrodes over said interlayer insulating film;
• and
• an insulating layer comprising an organic resin including black dye or carbon black filing gaps of said pixel electrodes;
• wherein a surface of at least the insulating layer is flattened by chemical mechanical polishing in order that an upper surface of the insulating layer in said gaps is flush with an upper surface of said pixel electrode.

A display device comprising:

• a plurality of switching elements over an insulating surface;
• an interlayer insulating film comprising organic resin having a flattened surface over said plurality of switching elements;
• a plurality of pixel electrodes over said interlayer insulating film;
• and
• an insulating layer comprising an organic resin including black dye or carbon black filing gaps of said pixel electrodes;
• wherein a surface of at least the insulating layer is flattened by chemical mechanical polishing in order that an upper surface of the insulating layer in said gaps is flush with an upper surface of said pixel electrode.

A semiconductor device comprising:

• a plurality of switching elements over an insulating surface;
• an interlayer insulating film having a flattened surface over said plurality of switching elements;
• a plurality of pixel electrodes over said interlayer insulating film;
• an insulating layer filling gaps of said pixel electrodes;
• wherein a surface of at least the insulating layer is flattened by chemical mechanical polishing in order that an upper surface of the insulating layer in said gaps is flush with an upper surface of said pixel electrode.