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US 2003/0193492 A1Published application
Thin film transistor circuit and display utilizing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd., a Japan corporation
InventorJun Koyama
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Abstract
There is provided a method of easily forming thin film transistors having the same characteristics in fabricating a differential circuit or a current mirror circuit utilizing two thin film transistors made of a polycrystalline silicon semiconductor. Four each thin film transistors are used in a differential circuit and a current mirror circuit, respectively. The thin film transistors are arranged to be symmetric to each other about a symmetry center instead of using thin film transistors arranged adjacently on the substrate in the respective circuits.
Claims1
A circuit comprising:
- a first thin film transistor;
- and
- a second thin film transistor,
- wherein a first channel formation region of said first thin film transistor and a second channel formation region of said second thin film transistor are arranged over a common substrate to be point-symmetric, and
- wherein a gate electrode of said first thin film transistor is connected with a gate electrode of said second thin film transistor,
- wherein a source electrode of said first thin film transistor is connected with a source electrode of said second thin film transistor, and
- wherein a drain electrode of said first thin film transistor is connected with a drain electrode of said second thin film transistor.
4 more elements
Dependencies are inferred from the claim text.