Revolution detecting sensor
AssigneeSumitomo Electric Industries, Ltd.
InventorTakaki Iwashita
Life of this patent
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Abstract
A revolution detecting sensor includes a Hall IC facing a detection target, a magnet positioned behind the Hall IC and applying a bias magnetic field, and a substrate provided with a detecting circuit. The revolution detecting sensor is configured such that a lead terminal from the Hall IC bypasses the magnet, to be guided to the substrate. In a magnet holder holding the magnet, a recessed guide guiding the lead terminal is formed, and a pressing member is provided. Thus, a tip end portion of the lead terminal can be held in a prescribed position, and an operation for attachment to the substrate can easily be performed.
Claims2
A revolution detecting sensor, comprising:
- a Hall IC facing a detection target;
- a magnet positioned behind the Hall IC and applying a bias magnetic field;
- and
- a substrate provided with a detecting circuit;
- wherein
- a lead terminal from said Hall IC bypasses said magnet to be guided to said substrate,
- magnetic fluctuation due to revolution of said detection target is converted to an electric signal with said Hall IC, and transmitted to the detecting circuit on said substrate through said lead terminal,
- in a magnet holder holding said magnet a recessed guide guiding said lead terminal is formed, and
- a pressing member defining said bypass path by engaging to the magnet holder to press the lead terminal to the guide is provided.
Dependencies are inferred from the claim text.