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AssigneeConexant Systems, Inc.
InventorsSurasit Chungpaiboonpatana, Hassan S. Hashemi, Siamak Fazelpour
Estimating the term…
In one embodiment, the invention includes first and second transmission lines fabricated in a redistribution layer over a semiconductor die. The first transmission line has a first distance from a first ground return path formed in a first metal level. The first transmission line has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line is affected by the distance between the first transmission line and the first ground return path. Similar to the first transmission line, the second transmission line has a second distance from a second ground return path formed in a second metal level. The second transmission line has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line is affected by the distance between the second transmission line and the second ground return path.
A structure comprising first and second transmission lines fabricated over a semiconductor die, said structure further comprising:
A structure comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
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Electrical arrangements for controlling or matching impedance: resistive arrangements
Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes: adaptable…
Top-view layouts: fan-in layouts
Of bump connectors: characterised by changes in properties of the bump connectors during connecting
Term end not estimated
1. Field of the Invention
The present invention is generally in the field of semiconductor circuits. More specifically, the present invention is in the field of transmission line impedance control in semiconductor circuits.
2. Background Art
FIG. 1 illustrates a top view of an exemplary structure in accordance with one embodiment of the present invention.
FIG. 2 illustrates an expanded view of a portion of the exemplary structure in FIG. 1 according to an embodiment of the present invention.
FIG. 3 illustrates a cross-sectional view of portion of a semiconductor die according to an embodiment of the present invention.
The present invention is directed to controlled impedance transmission lines in a redistribution layer. The following description contains specific information pertaining to various embodiments and implementations of the invention. One skilled in the art will recognize that the present invention may be implemented in a manner different from that specifically discussed in the present application. Moreover, some of the specific details of the invention are not discussed in order not to obscure the invention. The specific details not described in the present application are within the knowledge of a person of ordinary skills in the art.
The drawings in the present application and their accompanying detailed description are directed to merely example embodiments of the invention. To maintain brevity, other embodiments of the invention that use the principles of the present invention are not specifically described in the present application and are not specifically illustrated by the present drawings.
Semiconductor die 100 in FIG. 1 illustrates a top view of an exemplary semiconductor die in accordance with one embodiment of the present invention. It is noted that a “semiconductor die,” such as semiconductor die 100, is also referred to as a “die,” a “chip,” or a “semiconductor chip” in the present application. Those skilled in the art will appreciate that various elements and features are not shown in FIG. 1 to avoid obscuring the invention and to facilitate the description of FIG. 1. For example, a layer of dielectric, such as Benzocyclobutene (“BCB”), that is typically deposited over transmission lines, such as transmission line 104, is not shown in FIG. 1 to allow the transmission lines to be viewed. It will be shown in relation to FIG. 1, and further in relation to FIGS. 2 and 3, that the impedance of an exemplary embodiment of the present invention's transmission line can be controlled to match a desired impedance, such as an industry standard impedance of 50.0 ohm. Also, it is noted that, in the present application, the term “transmission line” refers to an “interconnect line” and the two terms are used interchangeably.