Bipolar transistor and method of fabricating the same

A semiconductor device comprising:

• a patterned device isolation region surrounding first and second device regions of a semiconductor body, the device isolation region being embedded in the semiconductor body along its upper surface;
• a patterned deep-trench isolation region formed in the device isolation region, the deep-trench isolation region being embedded into the semiconductor body deeper than the device isolation region;
• first and second bipolar transistors respectively formed in said first and second device regions, each of the first and second bipolar transistors comprising:
• a base;
• an emitter situated on the base;
• and
• a collector comprising a collector region which forms a collector-base junction with the base and a collector trench contact embedded into boundary portions of the deeptrench isolation region and the device isolation region deeper than the device isolation region to establish an electrical contact with the corrector region,
• the first and second bipolar transistors being symmetrically arranged with respect to a border line therebetween so that the collector trench contacts of the first and second bipolar transistors are adjacent to each other.

A semiconductor device comprising:

• a patterned device isolation region surrounding first and second device regions of a semiconductor body, the device isolation region being embedded in the semiconductor body along its upper surface;
• a patterned deep-trench isolation region formed in the device isolation region, the deep-trench isolation region-being embedded into the semiconductor body deeper than the device isolation region;
• first and second bipolar transistors respectively formed in said first and second device regions, each of the first and second bipolar transistors comprising:
• a base;
• an emitter situated on the base;
• and
• a collector comprising a collector region which forms a collector-base junction with the base and a collector trench contact embedded into boundary portions of the deep-trench isolation region and the device isolation region deeper than the device isolation region to establish an electrical contact with the corrector region,
• the first and second bipolar transistors being arranged identically to each other so that the collector trench contacts of the first and second bipolar transistors are remote from each other.

A method of fabricating a bipolar transistor, comprising:

• forming a patterned deep-trench isolation region in a device isolation region which surrounds a device region of a semiconductor body deeper than the device isolation region;
• forming a collector region in the device region;
• forming a base region in the device region above the collector region;
• forming an emitter on the base region;
• forming an insulating layer on the semiconductor body;
• and
• photoetching the insulating layer to simultaneously form an emitter contact opening, a base contact opening and a collector contact opening, so that the emitter and base contact opening respectively extend to said emitter and said base region, and the collector contact opening extends through boundary portions of the deep-trench isolation region and the device isolation region to a point where the collector contact opening adjoins the corrector region.