Thin film transistor and organic electroluminescent device using the same
AssigneeSamsung SDI Co., Ltd.
InventorsJi Yong Park, Hye Hyang Park
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Abstract
A thin film transistor having superior uniformity and an organic electroluminescent device using the same, and provides a thin film transistor which is characterized in that primary crystal grain boundaries of polycrystalline silicon do not meet boundaries between drain regions and active channel regions, thereby providing a thin film transistor having superior uniformity due to superior electric current characteristics so that the thin film transistor can be used in an organic electroluminescent device with superior performance.
Claims16
A thin film transistor in which primary crystal grain boundaries existing in polycrystalline silicon do not meet boundaries between the drain region and the active channel region of the thin film transistor.
A thin film transistor in which primary crystal grain boundaries existing in polycrystalline silicon do not meet boundaries between a drain region and an active channel region of the thin film transistor and the existing primary crystal grain boundaries have an inclined angle from 45° to 135° with respect to a current flow direction.
A thin film transistor in which the primary crystal grain boundaries existing in polycrystalline silicon are not within active channel regions of the thin film transistor.
Dependencies are inferred from the claim text.