Thin film transistor (tft) and method for fabricating the tft
OwnerWen-Chang Yehinventor
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Abstract
The present invention provides a simple method for forming the poly-Si and single crystalline Si TFT, which includes forming a line peninsular layer extending from an a-Si island layer at the active region. Then, a laser annealing process is performed, so that the re-crystallization will occur starting from an end of the line peninsular layer and then form the silicon island layer, serving as the active region for the TFT.
Claims25
A method for fabricating a semiconductor active layer in a thin film transistor (TFT), comprising:
- providing a substrate;
- depositing a semiconductor layer over the substrate;
- patterning the semiconductor layer to have a semiconductor island and a peninsula structure extending out from the semiconductor island, wherein a width of the peninsula structure has a width;
- and
- performing a laser annealing process on the semiconductor island and the peninsula structure, whereby the semiconductor island serves as the active layer,
- wherein the width of the peninsula structure produces a line thermal diffusion, and the semiconductor island is under a planar thermal diffusion, wherein a re-crystallization occurs first from the peninsula structure.
A method for forming a semiconductor layer tending to have a single crystal structure, comprising:
- forming a semiconductor layer over a substrate;
- patterning the semiconductor layer to form an island part with an protruding part;
- and
- performing a laser annealing process on the island part with the protruding part, wherein the protruding part has a width to have re-crystallization occurring first.
A semiconductor structure layer, which is to be transformed into a single crystal structure under an annealing operation, the semiconductor structure layer comprising:
- an island part deposed over a substrate;
- and
- an protruding part having a width, deposed over the substrate,
- wherein the width of the protruding part is used to produce a first occurring place in re-crystallization during the annealing operation.
The semiconductor structure layer, wherein the width of the protruding part is about equal to or less than a thermal diffusing length.
The semiconductor structure layer, wherein the protruding part is a line thermal diffusion source.
A method for forming a semiconductor layer tending to have a single crystal structure, comprising:
- forming a semiconductor layer over a transparent substrate;
- patterning the semiconductor layer to form an island part with an protruding part;
- and
- irradiating a laser beam as an annealing process on the semiconductor layer from a side of the transparent substrate opposite to the semiconductor layer, wherein a portion of the laser beam is reflected back by the semiconductor layer and is at least partially absorbed by the substrate for producing a larger thermal effect on the island part than the protruding part of the semiconductor, so as to have a tendency to cause a re-crystallization starting from the protruding part.
Dependencies are inferred from the claim text.