Light-emitting device, liquid-crystal display device and method for manufacturing same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToru Takayama, Shunpei Yamazaki
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToru Takayama, Shunpei Yamazaki
Estimating the term…
The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an alloy thereof) in the insulating layer. Furthermore, after planarizing the surface of the insulating layer, a metal protection film (Ti, TiN, Ta, TaN or the like) is formed in an exposed part. By using the buried interconnection in part of various lines (gate line, source line, power supply line, common line and the like) for a light-emitting device or liquid-crystal display device, line resistance is decreased.
A light-emitting device comprising:
A liquid-crystal display device comprising:
A display device comprising:
A display device comprising:
A display device comprising:
A method for manufacturing a light-emitting device comprising:
A method for manufacturing a liquid-crystal display device comprising:
Dependencies are inferred from the claim text.
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Active matrix addressed cells: wiring, e.g. gate line, drain line
Characterised by multiple TFTs: interconnections, e.g. scanning lines
Characterised by multiple TFTs: wherein the TFTs are in active matrices
Interconnections, e.g. wiring lines or terminals: comprising structures specially adapted for lowering the resistance
Term end not estimated
1. Technical Field of the Invention
The present invention relates to a semiconductor device having a circuit configured with thin-film transistors (hereinafter, referred to as TFTs) and a method for manufacturing same. For example, the invention relates to an electronic apparatus mounting, as a part, an electro-optical device represented by a liquid-crystal display or a light-emitting device having OLEDs.
Incidentally, the semiconductor device in this description refers to a device as a whole which is capable of functioning by the utilization of a semiconductor characteristic, i.e. electro-optical devices, semiconductor circuits and electronic apparatuses are all fallen under semiconductor devices.
FIGS. 1A to 1E are sectional views each showing a process of the present invention (embodiment);
FIGS. 2A and 2B are views each showing a section of a light-emitting element of the invention (example 1);
FIG. 3 is a top view in a manufacturing process of a light-emitting device (example 1);
Embodiments of the present invention will now be explained.
Herein, in FIGS. 1A-1E are shown an example to form a buried interconnection and TFT.
First, an etching-stop layer 102 is formed on a substrate 100 having an insulating surface. The etching-stop layer 102 may use a film, or a lamination thereof, based on an element selected from Ni, Ti, W, WSix, Al, Mo, Ta, Cr or Mo, or an alloy or compound material based on the element or elements. The etching-stop layer 102 is to serve as a seed layer (cathode in a plating process) in an electrolytic plating process to be carried out later. Subsequently, an insulating film 101 is formed based on silicon to cover the etching-stop layer 102. (FIG. 1A)