US 2003/0193054 A1 · Display device and method of fabricating the same

Abstract

To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

Drawings

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Drawings

Claims47

Dependent claims

A display device comprising a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate:

wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film provided on an upper side of the activation layer, an organic resin film provided over the first insulating nitride film, a second insulating nitride film provided over the organic resin film and a wiring provided over the second insulating nitride film;
wherein an inner wall face of a first opening portion provided at the organic resin film is covered by the second insulating nitride film, further comprising:
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion;
and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring.

3 more elements

wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film provided on an upper side of the activation layer, an organic resin film provided over the first insulating nitride film, a second insulating nitride film provided over the organic resin film and a wiring provided above the second insulating nitride film;
wherein an inner wall face of a first opening portion provided at the organic resin film is covered by the second insulating nitride film, a bottom face of said first opening portion including a region in which the first insulating film and the second insulating film are brought into contact with each other over 0.3 through 3 μm, further comprising:
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion;
and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring.

3 more elements

wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film provided on an upper side of the activation layer, an acrylic film provided over the first insulating nitride film, a second insulating nitride film provided over the acrylic film and a wiring provided over the second insulating nitride film;
wherein an inner wall face of a first opening portion provided at the acrylic film is covered by the second insulating nitride film, a bottom face of said first opening portion including a region in which the first insulating film and the second insulating film are brought into contact with each other over 0.3 through 3 μm, further comprising:
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion;
and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring.

3 more elements

wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film including argon provided on an upper side of the activation layer, a first organic resin film provided over the first insulating nitride film, a second insulating nitride film including argon provided over the organic resin film, a wiring provided over the second insulating nitride film, a second organic resin film provided over the wiring, a third insulating nitride film including argon provided over the second organic resin film and a metal film added with Li provided over the third insulating nitride film;
wherein an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by the second insulating nitride film, further comprising:
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion;
and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring.

3 more elements

A method of fabricating a display device comprising a method of fabricating a display device comprising the steps of

forming a pixel electrode covered by a base film on a substrate;
forming a semiconductor film over the base film;
forming a gate insulating film over the semiconductor film;
forming a gate electrode over the gate insulating film;
forming an impurity region at the semiconductor film;
forming a first insulating nitride film over the gate electrode;
forming an organic resin film over the first insulating nitride film;
forming a first opening portion at the organic resin film over the impurity region;
forming a second insulating nitride film to cover the first opening portion;
forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion;
forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion:
wherein in forming the first opening portion, the organic resin film is etched over the pixel electrode;
in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring.

10 more elements

A method of fabricating a display device comprising a method of fabricating a display device comprising the steps of:

forming a pixel electrode covered by a base film on a substrate;
forming a semiconductor film over the base film;
forming a gate insulating film over the semiconductor film;
forming a gate electrode over the gate insulating film;
forming an impurity region at the semiconductor film;
forming a first insulating nitride film over the gate electrode;
forming an acrylic film over the first insulating nitride film;
forming a first opening portion at the acrylic film over the impurity region;
forming a second insulating nitride film to cover the first opening portion;
forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion,
forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion:
wherein in forming the first opening portion, the acrylic film is etched over the pixel electrode,
in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring.

10 more elements

Dependencies are inferred from the claim text.

Description15,023 words

Summary8,678 words

#1. Field of the Invention

#The present invention relates to a semiconductor element (typically, a transistor) and a manufacturing method thereof, and more specifically belongs to a technique of a display device using a thin film transistor as a device. That is, the present invention belongs to a technique concerning a display device represented by a liquid crystal display device, an electroluminescence display device, or the like, a technique concerning a sensor represented by a CMOS sensor or the like, and other techniques concerning various semiconductor devices in which a semiconductor integrated circuit is mounted.

#2. Description of the Related Art

Brief description of the drawings22 figures

#FIGS. 1A, 1B, 1C and 1D are views showing a pixel constitution of a light emitting device;

#FIGS. 2A and 2B are views showing a sectional structure of the light emitting device;

#FIGS. 3A and 3B are views showing a structure of a thin film transistor;

Detailed description5,978 words

#(Embodiment 1)

#According to the embodiment, an explanation will be given of an example of making a position of forming the first opening portion 110 in FIGS. 3A and 3B differ therefrom in reference to FIGS. 10A and 10B. Further, FIGS. 10A and 10B show a sectional structure at a time point of forming a second opening portion. Further, notations used in FIGS. 3A and 3B are referred as necessary.

#In FIG. 10A, notation 801 designates a first opening portion having a diameter φ1 and notation 802 designates a second opening portion having a diameter φ2. A characteristic of FIG. 10A resides in that the first opening portion 801 is provided to extrude from an end portion of the source region 103. The photosensitive organic resin film 109 can be formed at a position as shown by the embodiment since progress of etching is stopped by constituting an etching stopper by the first passivation film 108. Further, the structure can be constituted similarly not only at a portion in contact with the source region or the drain region but also a portion in contact with the gate electrode 107.

Facts

Application

10/412,234Filed 14 Apr 2003

Priority

JP 2002-11174515 Apr 2002

Published

16 Oct 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10H 20/84
Constructional details: coatings, e.g. passivation layers or antireflective coatings
H10D 30/6715
Characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes: characterised by the doping profiles, e.g.…
H10D 86/00
Integrated devices formed in or on insulating or conducting substrates
H10D 86/0231
Of multiple TFTs: using masks, e.g. half-tone masks

Display device and method of fabricating the same

Life of this patent

Display device and method of fabricating the same

Life of this patent

Life of this patent

Abstract

Drawings

Drawings

Claims47

Description15,023 words

Drawings

Classification8 codes

Life of this patent

Description15,023 words