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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMisako Nakazawa, Mitsuhiro Ichijo, Toshiji Hamatani, Hideto Ohnuma, Naoki Makita
Estimating the term…
A barrier layer that meets three requirements, “withstand well against etching and protect a semiconductor film from an etchant as an etching stopper”, “allow impurities to move in itself during heat treatment for gettering”, and “have excellent reproducibility”, is formed and used to getter impurities contained in a semiconductor film. The barrier layer is a silicon oxide film and the ratio of a sub-oxide contained in the barrier layer is 18% or higher.
A method of manufacturing a semiconductor device, comprising:
A method of manufacturing a semiconductor device, comprising:
A method of manufacturing a semiconductor device, comprising:
A method of manufacturing a semiconductor device, comprising:
A semiconductor device including a semiconductor layer, a gate insulating film, and a gate electrode that are formed on an insulating surface,
A semiconductor device including a semiconductor layer, a gate insulating film, and a gate electrode that are formed on an insulating surface,
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Characterised by the electrode materials: conductor-insulator-semiconductor electrodes
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
Term end not estimated
1. Field of the Invention
The present invention relates to a method of gettering an impurity element that is contained in a semiconductor film. Also, the present invention relates to a technique of manufacturing a highly reliable semiconductor device of excellent characteristics from a crystalline semiconductor film that is formed in accordance with the present invention.
2. Description of the Related Art
In the accompanying drawings:
FIG. 1 is a graph showing results of comparing six kinds of barrier layers about the degree of gettering;
FIGS. 2A to 2F are graphs showing results of ESCA performed on the barrier layers;
Embodiment 1
A method of removing a metal element used in crystallization (a catalytic element or an element that accelerates crystallization) from a semiconductor film in accordance with the present invention will be described. The description is given with reference to FIGS. 4A to 4D.
A silicon nitride film with a thickness of 100 nm is formed as a base insulating film 11 on a glass substrate 10. An amorphous silicon film 12 is successively formed to a thickness of 20 to 100 nm. The base insulating film 11 may have a laminate structure.