Method of etching and apparatus for doing same
AssigneeTokyo Electron Limited
InventorsNoriiki Masuda, Manabu Sato
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Abstract
When etching a stacked-film layer including a plurality of films made of different quality materials by means of a magnetron plasma etching method, a magnetic field angle θ at which the magnetic line of force 45 intersects the edge portion of a wafer surface approximately at right angles, is optimized and set to every sort of the film to be etched, thereby enabling good etching uniformity to be realized.
Claims16
A method of etching a stacked-film layer formed on a substrate and including a plurality of films made of materials having different qualities comprising the steps of:
- generating such a magnetic field that makes a predetermined angle to the edge portion of said substrate mounted inside a processing chamber and is approximately in parallel with the surface of said substrate at the center portion thereof;
- applying a high frequency electric power for generating plasma to an electrode provided inside said processing chamber so as to generate a high frequency alternating electric field in the direction intersecting the surface of said substrate approximately at right angles, thereby making plasma of an etching gas introduced in said processing chamber and etching said stacked-film layer with said plasma;
- and
- setting said predetermined magnetic field angle to every sort of the film to be etched.
Apparatus for etching a stacked-film layer formed on a substrate and including a plurality of films made of materials having different qualities comprising:
- means for generating such a magnetic field that makes a predetermined angle to the edge portion of said substrate mounted inside a processing chamber and is approximately in parallel with the surface of said substrate at the center portion thereof;
- means for applying a high frequency electric power for generating plasma to an electrode provided inside said processing chamber so as to generate a high frequency alternating electric field in the direction intersecting the surface of said substrate approximately at right angles, thereby making plasma of an etching gas introduced in said processing chamber and etching said stacked-film layer with said plasma;
- and
- means for setting said predetermined magnetic field angle to every sort of the film to be etched.
Dependencies are inferred from the claim text.