Electro-explosive device with laminate bridge

An electro-explosive device (EED), comprising:

• a header;
• a cap coupled to a first side of the header to form an enclosure;
• ordnance material inside the enclosure;
• at least one electrically conductive pin that passes through a second side of the enclosure opposite the first side;
• and
• a semiconductor bridge (SCB) on a substrate, wherein the substrate is coupled to the first side of the header, the SCB comprising a series of layers of at least two reactive materials on top of the substrate, wherein the series of layers comprises,
• two relatively large sections that substantially cover the surface area of the substrate;
• and
• a bridge section joining the two relatively large sections;
• at least one conductive contact pad coupled to at least one layer of the series of layers and to the at least one electrically conductive pin, wherein a predetermined current through the at least one electrically conductive pin causes the bridge section to initiate a reaction in which the series of layers is involved, igniting the ordnance material.

A semiconductor bridge (SCB), comprising:

• a layer of electrically insulating material substantially covering a surface area of a substrate;
• at least one integrated diode comprising an interface of the electrically insulating material and another material;
• a bridge layer of a reactive material on top of the layer of electrically insulating material, wherein the bridge layer comprises,
• two relatively large sections that substantially cover the surface area of the substrate;
• and
• a bridge section joining the two relatively large sections;
• a laminate layer comprising a series of layers of at least two reactive materials, wherein the laminate layer covers a surface area of the bridge section;
• and
• at least one conductive contact pad coupled to the bridge section, wherein a predetermined current through the at least one conductive contact pad causes a reaction in which the laminate layer and the bridge layer are involved.

A method of fabricating a semiconductor bridge SCB device, comprising:

• depositing a layer of electrically insulating material over a surface area of a substrate so as to substantially cover a surface area of the substrate;
• selectively etching the electrically insulating material to expose the substrate;
• depositing a metal in areas exposed by the etching so as to form at least one diode;
• depositing a series of layers of at least two reactive materials on top of the insulating layer, wherein the series of layers comprises,
• two relatively large sections that substantially cover the surface area of the substrate;
• and
• a bridge section joining the two relatively large sections;
• coupling at least one conductive contact pad to at least one layer of the series of layers, wherein a predetermined current through the at least one conductive contact pad causes the bridge section to initiate a reaction in which the series of layers is involved.