System having a carrier substrate and a ti/p or. a1/p coating

#The invention refers to a system having a substrate as carrier and a coating deposited on the substrate as well as a process for depositing such a coating in a sputter plant, in particular in a PVD or PECVD sputter plant, respectively, and an implant, in particular a vascular implant, comprising such a system or coating, respectively, produced by sputter deposition in such a sputter plant.

#Systems having a substrate as carrier and coatings deposited on the substrate are known in many fields of technology, for example in telecommunications technology.

#In this respect, reference is for example made to the following publication “Vakuumbeschichtung 1, Plasmaphysik-Plasmadiagnostik-Analytik”, (Vacuum coating 1, plasma physics-plasma diagnostics-analytics), published by Dr.Ing. Hartmut Frey, VDI Verlag, Dusseldorf 1995. A large number of processes have become known for depositing the coating on a substrate carrier. One process for depositing coatings is sputter deposition. According to the encyclopedia “Elektronik und Mikroelektronik” (electronics and microelectronics) published by Dieter Sautter and Hans Weinerth, VDI-Verlag 1990, p. 804-807, sputtering or cathode evaporation is understood to be a physical process with which any material in solid form can be deposited on any substrate as a coating having good adhesive properties. In silicon-semiconductor technology, above all metallizing coatings for contacts and conducting paths as well as passivating coatings for the protection of finished integrated circuits are produced using sputter processes.

#The invention shall be described in the following by way of example using the drawings and embodiments. It is shown in

#FIG. 1 a nitinol stent;

#FIG. 2 a cross section and a longitudinal section of a stent ridge from FIG. 1;

#In FIG. 1 a nitinol stent is depicted. The stent comprises a number of ridges 2 connected with each other in a web-like manner. In this, the base 1 formed by the web represents a cylinder having a circular cross-section. On the ridges 2 as substrate, a coating with the elements titanium and phosphorus is deposited according to the invention. The width of the ridge is 200 micrometers.

#A particularly preferred coating, comprising a functional coating and a final coating, with the final coating acting as diffusion barrier, is represented in the longitudinal or axial section, respectively, by a ridge 2 in FIG. 2. The nitinol ridge base 2 having a diameter of 200 micrometers can be seen. The phosphorus-containing titanium-aluminum-nitride- or titanium-nitride coating 3, respectively, is directly deposited on the ridge base 2. The coating thickness preferably amounts to 3 micrometers during deposition and the proportion of phosphorus activated during irradiation with neutrons amounts to 7 to 9 atomic %. Radially around this coating 3, the titanium-nitride-coating 4 can be seen which is free of activity after a neutron activation and which has a thickness of from 20 to 40 nanometers during deposition and acts as diffusion barrier.

#By this representation is shown that the β-radiation is emitted radially and uniformly into the material surrounding the stent.