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AssigneeHoneywell International Inc.
InventorsOana Leonte, Tadashi Nakano, Kelly Beres, Kreisler Lau
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Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of polymeric dielectric materials and as a clean up solvent in the coating process. A process for forming a dielectric film on a substrate includes depositing a coating solution of a dielectric material in a formulation solvent onto a surface of the substrate and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate. The process is used to form films of dielectric materials including arylene ether dielectric polymers, hydridosiloxane resins, organohydridosiloxane resins, spin-on-glass materials, partially hydrolyzed and partially condensed alkoxysilane compositions which are cured to form a nanoporous dielectric silica material, and poly(perhydrido)silazanes.
A process for forming a dielectric film on a substrate comprising:
9 The process of claim 8 wherein the formulation solvent is an aromatic aliphatic ether.
A polymeric solution comprising an inorganic spin-on polymer dissolved in an aromatic aliphatic ether solvent.
A microelectronic device comprising a dielectric film formed on a substrate by the process comprising:
Dependencies are inferred from the claim text.
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Organic materials, e.g. photoresists: carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
Characterised by the chemical constitution of the organic liquid: oxygen containing compounds
The compound comprising silicon and nitrogen: the compound being a silazane
Deposition processes: liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
Term end not estimated
1. Field of the Invention
This application relates generally to dielectric materials including low dielectric constant polymer materials and more particularly to solvent systems for use in formulation and clean up processing of such materials.
2. Description of the Related Art
FIGS. 1a and 1b are measured edge profiles of a 1 μm thick layer of FLARE™ where edge bead removal was performed with anisole using a 5 second and 1 second dispense time, respectively, according to an aspect of the present invention. FIG. 1c is the measured edge profile of the same material where edge bead removal was performed with cyclohexanone using a 5 second dispense time, according to the prior art.
Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of spin-on dielectric materials and as a clean up solvent for the processes of edge bead removal, wafer backside rinsing, and equipment rinsing.
The aromatic aliphatic ethers have the general formula 2
where R is CnH2n+1, n=1 to 6 and R, to R5 is CmH2m+1, m=0 to 3. Advantageous examples of aromatic aliphatic ethers include anisole, C6H5OCH3, where R=CH3, corresponding to n=1 and R1 to R5=H, corresponding to m=0, and phenetole, C6H5OC2H5, where R=C2H5 (n=2) and R1 to R5=H (m=0). The boiling points of anisole and phenetole are 155° C. and 170° C., respectively. Other advantageous solvents include 2-, 3-, and 4-methylanisole with a boiling point in the range of 170° C. to 175° C.