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AssigneeLG Chem, Ltd.
InventorsMin-Jin Ko, Myung-Sun Moon, Dong-Seok Shin, Jung-Won Kang, Hye-Yeong Nam
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The present invention relates to a low dielectric material essential for a next generation electric device such as a semiconductor device, with a high density and high performance. In detail, the present invention provides: a process for preparing an organic silicate polymer comprising a polymerization step in the absence of homogenizing organic solvents, of mixing and reacting organic silane compounds with water in the presence of a catalyst to hydrolyze and condense the silane compounds, that is thermally stable and has good mechanical and crack resistance properties; and a coating composition for forming a low dielectric insulating film; and a process for preparing a low dielectric insulating film using the organic silicate polymer prepared according to the process, and an electric device comprising the low dielectric insulating film prepared according to the process.
A process for preparing an organic silicate polymer comprising:
12 The coating composition according to claim 10, wherein a molecular weight of the organic silicate polymers of a) is 500 to 1,000,000.
Dependencies are inferred from the claim text.
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In which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms: by carbon linkages
Polysiloxanes: preparatory processes
Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing…:…
Of asbestos: as siloxane, silicone or silane
Term end not estimated
(a) Field of the Invention
The present invention relates to a low dielectric material essential for a next generation electric device such as a semiconductor device, with a high density and high performance. More specifically, the present invention relates to: a process for preparing an organic silicate polymer that is thermally stable and has good mechanical and crack resistance properties, and a coating composition for forming a low dielectric insulating film; and a process for preparing a low dielectric insulating film using the organic silicate polymer prepared according to the process, and an electric device comprising the low dielectric insulating film prepared according to the process.
(b) Description of the Related Art
FIG. 1 is a Fourier Transform Infrared (FTIR) spectrum of the film produced by Example 2.
FIG. 2 is a Fourier Transform Infrared (FTIR) spectrum of the film produced by Comparative Example 2.
The present invention will now be explained in more detail.
A process for preparing an organic silicate polymer of the present invention comprises the step of direct hydrolysis and condensation reaction by mixing an organic silane compound and water in the absence of an organic solvent.
The present invention provides a process for preparing an organic silicate polymer, and a low dielectric resin composition useful as (e.g.) a resin composition capable of forming a uniform dielectric film. The mechanical strength of as-cured films formed in accordance with present invention is enhanced as compared to as-cured films formed from previously known organic silicate polymers that have high levels of a cage and/or ladder structure.