Charged particle beam adjusting method, pattern transfer method and device manufacturing method using the same method
OwnerMamoru Nakasujiinventor
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OwnerMamoru Nakasujiinventor
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Problem: In a pattern size measurement apparatus, there are difference between pattern size measured around the optical axis and that measured at deflection edge. In a defect detection apparatus, the defects that are between raster and around the optical axis may be missed to detect. In an electron beam pattern transfer apparatus, there are pattern size difference between patters formed around the optical axis and that formed at the deflection edge. Means for Resolution: In the pattern size measuring apparatus or the defect detection apparatus, the beam size is adjusted so that everywhere in the deflection field the beam diameter is constant, and then lens excitation is adjusted under focus condition at around the optical axis. In the electron beam pattern transfer apparatus, for the sub field around the optical axis the lens excitation is adjusted so under focus condition that the beam blur at the sub-field around the optical axis is nearly equal to that at the sub field in the deflection edge. As a results pattern size accuracy can be improved.
A charged particle beam adjusting method comprising the steps of:
A charged particle beam adjusting method for a charged particle beam apparatus comprising the steps of:
A pattern transferring method comprises the step of:
Dependencies are inferred from the claim text.