Electroless deposition method
AssigneeApplied Materials, Inc.
InventorsDeenesh Padhi, Joseph Yahalom, Sivakami Ramanathan, Chris R. McGuirk, Srinivas Gandikota, Girish Dixit
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AssigneeApplied Materials, Inc.
InventorsDeenesh Padhi, Joseph Yahalom, Sivakami Ramanathan, Chris R. McGuirk, Srinivas Gandikota, Girish Dixit
Estimating the term…
Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.
A method of processing a substrate, comprising:
A method of processing a substrate, comprising:
A method of processing a substrate comprising a dielectric material and apertures formed therein, the method comprising:
A method of processing a substrate having a conductive silicon-based material disposed thereon with patterned apertures formed therein, the method comprising:
Dependencies are inferred from the claim text.