Simultaneous cyclical deposition in different processing regions
AssigneeApplied Materials, Inc.
InventorsW. Benjamin Glenn, Donald J. Verplancken
Life of this patent
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Abstract
A method for simultaneous deposition of multiple compounds on a substrate is provided. In one aspect, a gas stream is introduced into a processing chamber and flows across a substrate surface disposed therein. The gas stream includes at least one dose of a first compound and at least one dose of a second compound. The doses of the first and second compounds are separated by a time delay, and the at least one dose of the first compound and the at least one dose of the second compound are simultaneously in fluid communication with the substrate surface.
Claims39
A method for simultaneous deposition of multiple compounds on a substrate, comprising:
- flowing a gas stream into a processing chamber and across a substrate surface disposed therein, the gas stream comprising:
- at least one dose of a first compound;
- and
- at least one dose of a second compound,
- wherein the doses of the first and second compounds are separated by a time delay, and wherein the at least one dose of the first compound and the at least one dose of the second compound are simultaneously in fluid communication with the substrate surface;
- and
- depositing the compounds on the substrate surface.
A method for simultaneous deposition of multiple compounds on a substrate, comprising:
- flowing a gas stream into a processing chamber and across a surface substrate disposed therein, the gas stream comprising:
- at least one dose of a first compound;
- and
- at least one dose of a second compound,
- wherein the doses of the first and second compounds are separated by a time delay, and wherein the first compound adsorbs onto at least a first portion of the substrate surface while the second compound simultaneously adsorbs onto a second portion of the substrate surface.
A method for simultaneous deposition of multiple compounds on a substrate, comprising:
- flowing a gas stream into a processing chamber and across a surface of a substrate disposed therein, the gas stream comprising:
- at least one dose of a first compound;
- and
- at least one dose of a second compound, whereby the doses of the first and second compounds are separated by a time delay;
- wherein the first compound and the second compound form a repeatable chain of compounds simultaneously contained within a reaction zone of the processing chamber, the reaction zone comprising a volume between each dosing valve providing the compounds and the substrate that is in fluid communication with the substrate surface;
- and depositing the compounds on the substrate surface.
A method for simultaneous deposition of multiple compounds on a substrate, comprising:
- flowing a gas stream into a processing chamber and across the exposed face of a substrate supported therein for processing, the gas stream comprising:
- at least one dose of a first compound or precursor thereof;
- and
- at least one dose of a second compound or precursor thereof, said doses of first and second compounds being separated by a time delay;
- wherein the respective durations of said first and second compound doses and said time delay being such that said first compound and said second compound are adsorbed simultaneously at respective different locations on the face of the substrate.
Dependencies are inferred from the claim text.