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US 2003/0190802 A1Published application
Method for forming a plug metal layer
AssigneeUnited Microelectronics Corp.
InventorsYu-Piao Wang, Chia-Che Chuang
Life of this patent
Estimating the term…
Abstract
Perform an atomic layer deposition (ALD) at least once to form a continuous metal seed layer (CMSL) on the barrier layer, wherein the atomic layer deposition comprises: a mixing gas of hydrogen and silane, such as hydroxy silane or tetrahydroxy silane, is transported on the barrier layer; next, perform a purge/vacuum process; then a reactive gas, such as WF6, is transported to form the continuous metal seed layer (CMSL); the cycle step of the atomic layer deposition (ALD) can be repeated to form the thickness of the continuous metal seed layer (CMSL) about 20 to 40 Å.
Claims40
A method for forming a metal layer, the method comprising:
- providing a semiconductor substrate having a barrier layer;
- performing an atomic layer deposition at least one time to form a continuous metal seed layer on said barrier layer;
- and
- forming said metal layer on said continuous metal seed layer.
1 more element
A method for forming a metal layer, the method comprising:
- providing a semiconductor substrate with a barrier layer, wherein said barrier layer has a nitride titanium layer that is formed by way of using a metal organic chemical vapor deposition;
- performing an atomic layer deposition at least one time to form a continuous metal seed layer on said barrier layer;
- forming a nucleation layer with metal on said continuous metal seed layer;
- and
- forming said metal layer on said nucleation layer with metal.
2 more elements
A method for forming a plug metal layer, the method comprising:
- providing a semiconductor substrate with a dielectric layer, wherein said dielectric layer has a via hole therein;
- forming a barrier layer on said dielectric layer and the sidewall and bottom of said via hole;
- treating said barrier layer by way of using a plasma process;
- performing an atomic layer deposition at least one time to form a continuous metal seed layer on said barrier layer;
- and
- forming said plug metal layer on said continuous metal seed layer.
3 more elements
A method for forming a plug metal layer, the method comprising:
- providing a semiconductor substrate with a dielectric layer thereon;
- forming a via hole in said dielectric layer;
- forming a barrier layer on said dielectric layer and the sidewall and bottom of said via hole;
- treating said barrier layer by way of using a plasma process;
- performing an atomic layer deposition at least one time to form a continuous metal seed layer that has a thickness about 20 to 40 Å on said barrier layer;
- forming a nucleation layer on said continuous metal seed layer;
- and
- performing a chemical vapor depositing process to form said plug metal layer on said nucleation layer.
5 more elements
A method for forming a plug tungsten layer, the method comprising:
- providing a semiconductor substrate with a dielectric layer, wherein said dielectric layer has a via hole therein;
- conforming a titanium layer on said dielectric layer and the sidewall and the bottom of said via hole;
- forming a nitride titanium layer on said titanium layer, wherein said titanium layer and said nitride titanium layer stack to form a barrier layer;
- treating said barrier layer by way of using a plasma process;
- transporting a mixing gas having a hydrogen and a silane on said barrier layer to absorb said mixing gas on said barrier layer;
- performing a purge/vacuum process to remove remainder after absorption;
- transporting a reactive gas with a tungsten on said barrier layer with said mixing gas to form a continuous tungsten seed layer on said barrier layer;
- forming a tungsten layer on said continuous tungsten seed layer;
- and
- forming said plug tungsten layer in said via hole.
7 more elements
A method for forming a plug tungsten layer, the method comprising:
- providing a semiconductor substrate;
- forming a dielectric layer on said semiconductor substrate;
- forming a photoresist layer on said dielectric layer;
- etching said dielectric layer by way of using said photoresist layer as an etching mask to form a via hole in said dielectric layer;
- removing said photoresist layer;
- conforming a titanium layer on said dielectric layer and the sidewall and the bottom of said via hole;
- forming a first nitride titanium layer on said titanium layer by way of using a metal organic chemical vapor deposition;
- forming a second nitride titanium layer on said first nitride titanium layer by way of using a physical vapor deposition, wherein said titanium layer, said first nitride titanium layer and said second nitride titanium layer stack to form a barrier layer;
- treating said barrier layer by way of using a plasma process with nitrogen/hydrogen;
- transporting a mixing gas having a hydrogen and a silane on said barrier layer to absorb said mixing gas on said barrier layer;
- performing a purge/vacuum process to remove remainder after absorption;
- transporting a reactive gas with a WF6 on said barrier layer with said mixing gas to perform a substitution reaction that reacts said reactive gas with said mixing gas, so as to form a continuous tungsten seed layer with a thickness about 20 to 40 Å on said barrier layer;
- forming a nucleation layer on said continuous tungsten seed layer;
- performing a chemical vapor deposition to form a tungsten layer on said continuous tungsten seed layer;
- and
- etching back tungsten layer to form said plug tungsten layer in said via hole.
13 more elements
Dependencies are inferred from the claim text.