Method of manufacturing a semiconductor device

#The present invention relates to a method of manufacturing a semiconductor device and more particularly to a method applicable effectively to a technique for manufacturing a thin semiconductor-device which comprises providing a substrate (wiring substrate) on a main surface of which are formed product forming portions(the chip mounting areas), orderly in longitudinal and transverse rows, mounting semiconductor chips as thin as 100 μm on the product forming portions respectively, connecting electrodes of the semiconductor chips with wiring lines of the wiring substrate through electrically conductive wires, covering the main surface side of the wiring substrate with an insulating resin layer, forming bump electrodes (salient electrodes) on a back side of the wiring substrate, and then dicing the wiring substrate together with the resin layer along boundaries between adjacent product forming portions.

#As one of semiconductor device (semiconductor integrated circuit device) manufacturing techniques there is known a technique which comprises using a wiring substrate on a main surface of which are formed product forming portions orderly in longitudinal and transverse rows(in a matrix), mounting semiconductor chips on the product forming portions, respectively, connecting electrodes of the semiconductor chips with wiring lines of the wiring substrate through electrically conductive wires, covering the main surface side of the wiring substrate with an insulating resin layer, and then dicing the wiring substrate together with the resin layer along boundaries between adjacent product forming portions.

#In Japanese Published Unexamined Patent Application No. Hei 10 (1998)-27836 there is disclosed a technique which comprises affixing a protective tape to a surface of a substrate after an operation inspection for functional elements, then grinding a back side of the substrate, affixing a dicing tape to the back side, dicing the substrate into plural functional elements to form chips, picking up the chips from the dicing tape, mounting each of the chips onto a predetermined package member through a paste material, allowing the paste material to cure, and thereafter removing the protective tape. According to this technique, a 620 μm thick substrate is subjected to back grinding into a 400 μm thick substrate. When picking up each chip from the dicing tape, the chip is pushed up with a single push-up pin and the chip is held by a flat collet.

#FIG. 1 is a sectional view of a semiconductor device fabricated by a semiconductor device manufacturing method according to an embodiment (first embodiment) of the present invention;

#FIG. 2 is a flow chart illustrating the semiconductor device manufacturing method of the first embodiment;

#FIG. 3 is a schematic diagram of a wafer with a protective film affixed to a main surface of the wafer in the semiconductor device manufacturing method of the first embodiment;

#An embodiment of the present invention will be described in detail hereinunder with reference to the accompanying drawings. In all of the drawings for illustrating the embodiment, components having the same functions are denoted by the same reference numerals, repeated explanations thereof will be omitted.

#(First Embodiment)

#FIGS. 1 to 14 illustrate a semiconductor device manufacturing method according to an embodiment (first embodiment) of the present invention, of which FIG. 1 is a schematic sectional view of a semiconductor device used in the first embodiment and FIGS. 2 to 14 illustrate how to fabricate the semiconductor device.