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AssigneeSamsung Electronics Co., Ltd.
InventorsChang Hyun Ko, Young Sub You, Jai Dong Lee, Ki Hyun Hwang
Estimating the term…
A method of fabricating a capacitor of a semiconductor device, includes forming a lower electrode on a semiconductor substrate, sequentially forming an aluminum oxide layer and a titanium oxide layer on the lower electrode, and forming an upper electrode on the titanium oxide layer, wherein the upper electrode crosses over the lower electrode. The titanium oxide layer is formed to have a thickness in a range of from about 2 Å to about 50 Å, and the upper electrode is formed at a temperature in a range of from about 150° C. to about 630° C. The temperature at which the upper electrode is formed is decreased as the thickness of the titanium oxide layer is increased to produce a capacitor of a semiconductor device having a minimized leakage current characteristic.
A method of fabricating a capacitor of a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Capacitors: capacitors having no potential barriers
The capacitor extending over the transistor: making a connection between the transistor and the capacitor, e.g. plug
Having a storage electrode stacked over the transistor: the storage electrode having multiple segments
Of capacitors having no potential barriers: using deposition processes to form electrode extensions
Term end not estimated
1. Field of the Invention
The present invention relates to a method of fabricating a semiconductor device. More particularly, the present invention relates to a method of fabricating a capacitor of a semiconductor device having a dielectric layer consisting of a sequentially stacked aluminum oxide layer and a titanium oxide layer.
2. Description of the Related Art
The above features and advantages of the present invention will become more apparent to those of ordinary skill in the art by describing in detail preferred embodiments thereof with reference to the attached drawings in which:
FIG. 1 illustrates a sectional view of a capacitor of a conventional semiconductor device;
FIG. 2 is a graph illustrating leakage current characteristics of capacitors according to the material of the upper electrode;
Korean Patent Application No. 10-2002-18447, filed on Apr. 4, 2002, and entitled: “Method of Fabricating a Capacitor of a Semiconductor Device” is incorporated by reference herein in its entirety.
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being “under” another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. Like numbers refer to like elements throughout.
FIGS. 3 through 5 illustrate sectional views of a method of fabricating a capacitor of a semiconductor device according to a preferred embodiment of the present invention.