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US 2003/0190777 A1Published application
Semiconductor thin flim forming method and semiconductor device
AssigneeFujitsu Limited
InventorsAkito Hara, Nobuo Sasaki
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AssigneeFujitsu Limited
InventorsAkito Hara, Nobuo Sasaki
Estimating the term…
A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
A semiconductor device including an active semiconductor film formed on an insulating substrate, at least a channel region of the active semiconductor film having a quasi-monocrystal state, which is a crystal state containing only grain boundaries having inclination angles of not more than 90 to a current direction.
A semiconductor device including an active semiconductor film formed on an insulating substrate,
A semiconductor thin film including a width-reduced part, at least the width-reduced part having a quasi-monocrystal state, which is a crystal state including grain boundaries having an inclination angles of not more than 90 to a current direction.
Dependencies are inferred from the claim text.
From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Using laser beams: continuous wave laser beam
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
Comprising silicon, e.g. amorphous silicon or polysilicon: comprising monocrystalline silicon
Term end not estimated
The present invention relates to a polycrystal thin film forming method and forming system, more specifically a polycrystal thin film forming method and forming system for forming at low temperature polycrystal thin film on a substrate of low heat resistance temperature.
Furthermore, the present invention relates to a semiconductor thin film forming method, a thin film transistor fabrication method and a liquid crystal display device fabrication method, more specifically a semiconductor thin film forming method which can form semiconductor thin film having good crystallization on a substrate having low heat resistance temperature, a thin film transistor fabrication method for fabricating a thin film transistor using the semiconductor thin film, and a liquid crystal display device for fabricating a liquid crystal display device using the thin film transistor.
Recently, liquid crystal displays (LCDs) using thin film transistors (TFTs) as switch devices for the picture elements because of electric power saving, space saving, high response speed, beautiful display, etc.
FIG. 1 is a conceptual view of the polycrystal thin film forming system according to a first embodiment of the present invention, which shows a general structure thereof.
FIG. 2 is a conceptual view of a part of the polycrystal thin film forming system according to the first embodiment of the present invention.
FIGS. 3A to 3C are timing chart of flow of a high-temperature gas, applying a laser beam and temperature changes of the surface of the semiconductor thin film.
[A First Embodiment]
The polycrystal thin film forming method and forming system according to a first embodiment of the present invention will be explained with reference to FIGS. 1 to 3C. FIG. 1 is a conceptual view of a general structure of the polycrystal thin film forming system according to the present embodiment. FIG. 2 is a conceptual view of a part of the polycrystal thin film forming system according to the present embodiment. FIGS. 3A to 3C are timing charts of timing of flowing a high-temperature gas, applying a laser beam, and temperature changes of the surface of the semiconductor thin film.
(Polycrystal Thin Film Forming System)