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AssigneePohang University of Science and Technology Foundation
InventorsJong Lam Lee, Soo Young Kim, Ho Won Jang
Estimating the term…
A gallium nitride (GaN) based optical device and a fabrication method thereof are provided. The GaN based optical device includes a substrate, a p-type GaN (p-GaN) layer formed on the substrate, and a p-type ohmic electrode formed on the p-GaN layer, wherein the p-type ohmic electrode is formed of a triple layer comprised of a nickel (Ni) layer, a gold (Au) layer and an indium tin oxide (ITO) layer sequentially formed. The thicknesses of the Ni layer and the Au layer forming the triple layer are smaller than the thickness of the ITO layer. When the p-type ohmic electrode in the GaN based optical device is formed of a triple layer comprised of Ni/Au/ITO, the Ni/Au layers reduce contact resistance and the ITO, which is a transparent, conductive oxide layer, increases transparency and increases luminescence efficiency.
A gallium nitride (GaN) based optical device comprising:
A method of fabricating a GaN based optical device comprising:
Dependencies are inferred from the claim text.
From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Characterised by their material: transparent materials
Of electrodes ohmically coupled to a semiconductor: to Group III-V semiconductors
Comprising only Group III-V materials, e.g. GaP: containing nitrogen, e.g. GaN
Inorganic light-emitting semiconductor devices having potential barriers
Term end not estimated
This application claims the priority of Korean Patent Application No. 2002-16090, filed on Mar. 25, 2002, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
1. Field of the Invention
The present invention relates to an ohmic electrode for use in an optical device and a fabrication method thereof, and more particularly, to a p-type ohmic electrode in a gallium nitride based (GaN based) optical device and a fabrication method thereof.
The above aspect and advantages of the present invention will become more apparent by describing in detail preferred embodiments thereof with reference to the attached drawings in which:
FIGS. 1A through 1E are cross-sectional views of a p-type ohmic electrode in a gallium nitride based (GaN based) optical device according to the present invention and a fabrication method thereof;
FIG. 2 is a graphical representation illustrating resistivity of an ITO layer employed in the p-type ohmic electrode of a GaN based optical device according to the present invention, depending on a target-to-substrate distance during deposition of the ITO layer;
Now referring to the drawings, an explanation will be given of embodiments of the present invention. However, the following illustrative embodiments may be modified in various forms and the invention is not limited by the embodiments. These embodiments are provided for explaining the invention more perfectly to one skilled in the art. In the drawings, some dimensions of layers or regions may be exaggerated for the sake of clarity of the description. Also, when it is said that a layer exists “on” another layer or a substrate, the layer may directly exist on another layer or the substrate or a third layer may interposed therebetween.
FIGS. 1A through 1E are cross-sectional views of a p-type ohmic electrode in a gallium nitride based (GaN based) optical device according to the present invention and a fabrication method thereof, in which the p-type ohmic electrode is formed so as to measure ohmic contact resistance rather than being directly formed on the GaN based optical device.
In detail, as shown in FIG. 1A, a GaN buffer layer 13 is on a sapphire substrate 11. Then, a p-GaN layer 15 is formed on the GaN buffer layer 13.