Cyclical deposition of a variable content titanium silicon nitride layer

A structure, comprising:

• a variable content material layer, comprising
• a bottom sub-layer comprising TiSiX1NY1;
• a middle sub-layer comprising TiSiX2NY2;
• and
• a top sub-layer comprising TiSiX3NY3, wherein X1 is less than X2 and wherein X3 is less than X2;
• and
• a top conductive material layer comprising copper formed over the top sub-layer of the variable content material layer.

A method of forming a variable content material layer, comprising:

• (a) providing pulses of a titanium precursor;
• (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor;
• (c) increasing the ratio of the silicon precursor to the nitrogen precursor;
• and
• (d) decreasing the ratio of the silicon precursor to the nitrogen precursor.

A structure, comprising:

• a variable content material layer, comprising:
• a bottom sub-layer comprising TiSiX1NY1;
• and
• a top sub-layer comprising TiSiX2NY2, wherein X2 is greater than X1;
• and a top conductive material layer comprising tungsten formed over the top sub-layer of the variable content material layer.

A method of forming a variable content material layer, comprising:

• (a) providing pulses of a titanium precursor;
• (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor;
• and
• (c) decreasing the ratio of the silicon precursor to the nitrogen precursor.

A variable content material layer, comprising:

• a bottom sub-layer comprising TiSiX1NY1;
• a middle sub-layer comprising TiSiX2NY2;
• and
• a top sub-layer comprising TiSiX3NY3, wherein X1 is greater than X2 and wherein X3 is greater than X2.

A structure, comprising:

• a variable content material layer, comprising
• a bottom sub-layer comprising TiSiX1NY1;
• a middle sub-layer comprising TiSiX2NY2;
• and
• a top sub-layer comprising TiSiX3NY3, wherein X1 is greater than X2 and wherein X3 is greater than X2;
• and
• a top conductive material layer comprising tungsten formed over the top sub-layer of the variable content material layer.

A method of forming a variable content material layer, comprising:

• (a) providing pulses of a titanium precursor;
• (b) providing pulses of a silicon precursor and providing pulses of a nitrogen precursor at a ratio of the silicon precursor to the nitrogen precursor;
• (c) decreasing the ratio of the silicon precursor to the nitrogen precursor;
• and
• (d) increasing the ratio of the silicon precursor to the nitrogen precursor.