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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsRie Kojima, Haruhiko Habuta, Takashi Nishihara, Hideki Kitaura, Noboru Yamada
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An information recording medium which ensures high reliability and favorable overwrite cycle-ability is provided, even when an interface layer is not provided between a recording layer and a dielectric layer. The recording layer and the dielectric layers are formed on the surface of the substrate. In the recording layer, a phase change is generated between a crystal phase and an amorphous phase by irradiation of light or application of an electric energy. The dielectric layers are oxide-fluoride-based material layers containing one or more oxides which each are an oxide of at least one element selected from the group GM consisting of Ti, Zr, Cr, Hf, Nb, Ta, Cr and Si and one or more fluorides which each are a fluoride of at least one element selected from the group GL consisting of La, Ce, Pr, Nd, Gd, Dy, Ho, Er and Yb.
An information recording medium comprising:
A method for producing an information recording medium which comprises a substrate, a recording layer, and an oxide-fluoride-based material layer comprising at least one element selected from the group GM consisting of Ti, Zr, Hf, Nb, Ta, Cr and Si, oxygen atom, at least one element selected from the group GL consisting of La, Ce, Pr, Nd, Gd, Dy, Ho, Er and Yb, and fluorine atom, the method comprising a process of forming the oxide-fluoride-based material layer by a sputtering method using a sputtering target comprising at least one element selected from the group GM, oxygen atom, at least one element selected from the group GL and fluorine atom.
The method according to claim 357 wherein the sputtering target comprises a material which is expressed with a formula:
Dependencies are inferred from the claim text.