Method of forming deposited film
AssigneeCanon Kabushiki Kaisha
InventorsAtsushi Koike, Masahiro Kanai, Hirohito Yamaguchi
Life of this patent
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Abstract
In a deposited-film-forming method of forming a compound film on a substrate by a chemical reaction between the particles of a raw material emitted from a raw material particle generation source opposed to the substrate in the direction of the substrate, and the atoms of a reactive gas supplied to a flying space of the particles of the raw material, the space being interposed between the substrate and the raw material particle source, the atoms of a rare gas in an excited state are supplied to the flying space of the particles of the raw material, in order to ionize the atoms of the reactive gas and the particles of the raw material and thereby induce the chemical reaction.
Claims9
A deposited-film-forming method of forming a compound film on a substrate on which a film is to be formed, comprising:
- a step of emitting particles of a raw material from a raw material particle generation source, opposed to the substrate, in a direction of the substrate;
- a step of supplying atoms of a reactive gas to a flying space of the particles of the raw material, the space being interposed between the substrate and the raw material particle generation source;
- a step of supplying atoms of a rare gas in an excited state to the flying space of the particles of the raw material to ionize the atoms of the reactive gas and the particles of the raw material;
- and
- a step of forming a compound film on the substrate by a chemical reaction of the ionized atoms of the reactive gas and the ionized particles of the raw material.
Dependencies are inferred from the claim text.