Semiconductor integrated circuit device having hierarchical power source arrangement
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTadato Yamagata, Kazutami Arimoto, Masaki Tsukude
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTadato Yamagata, Kazutami Arimoto, Masaki Tsukude
Estimating the term…
A variable impedance power supply line and a variable impedance ground line supplying voltages VCL1 and VSL1, respectively, are set to a low impedance state in a stand-by cycle and in a row related signal set period, and to a high impedance state in a column circuitry valid time period. Variable impedance power supply line and variable impedance ground line supplying voltages VCL2 and VSL2, respectively, are set to a high impedance state in the stand-by cycle, and low impedance state in the active cycle and in the row related signal reset time period. Inverters operate as operating power supply voltage of voltages VCL1 and VSL2 or voltages VCL2 and VSL1, in accordance with a logic level of, an output signal in the stand-by cycle and in the active cycle. Thus a semiconductor memory device is provided in which subthreshold current in the stand-by cycle and active DC current in the active cycle can be reduced.
A semiconductor device receiving at an input node a signal which attains to a low level in a standby cycle and to a high level in an active cycle, said active cycle having a set period in which said signal changes from the low level to the high level, and a holding period in which said signal is maintained at the high level, said semiconductor device comprising:
A semiconductor device receiving at an input node a signal which attains to a high level in a stand-by cycle and to a low level in an active cycle, said active cycle having a set period in which said signal changes from the high level to the low level and a holding period in which said signal is maintained at the low level, said semiconductor device comprising:
A semiconductor device including a logic gate outputting a signal which attains to a first logic level in a stand-by cycle and to a second logic level in an active cycle, said active cycle including a set period in which the logic level of said signal changes and a holding period in which said signal holds said second logic level, said semiconductor device comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device having a hierarchical power supply structure including a main power supply line and a subpower supply line, and having a stand-by cycle and an active cycle as operation cycles, comprising:
A semiconductor memory device storing data and, having a main power supply line, a subpower supply line selectively coupled to said main power supply line and receiving a voltage on said main power supply line, and internal circuitry operating using the voltage on said subpower supply line as one operating power supply voltage, comprising:
An arrangement in a semiconductor memory device having a main power supply line and a subpower supply line, for controlling voltage level on said subpower supply line, comprising:
Dependencies are inferred from the claim text.