Non-volatile, multi-level memory device

A read-only memory device, comprising:

• a plurality of layers having non-volatile memory cells, an individual layer comprising:
• electrically conductive traces;
• and
• memory components configured to indicate a resistance value when a potential is applied to a selected non-volatile memory cell, wherein an individual non-volatile memory cell includes a memory component connected between a first electrically conductive trace in the individual layer and a second electrically conductive trace in the individual layer.

A method, comprising:

• forming a first layer;
• forming one or more additional layers over the first layer;
• wherein forming an individual layer comprises:
• forming a plurality of electrically conductive traces;
• and
• forming a plurality of non-volatile memory cells, individual memory cells being formed by connecting a memory component between a first electrically conductive trace in the individual layer and a second electrically conductive trace in the individual layer.

A method of making a programmable logic device, comprising:

• providing a semiconductor substrate;
• forming a first layer on the semiconductor substrate;
• forming one or more additional layers over the first layer;
• wherein forming an individual layer comprises:
• forming a plurality of conductive traces with electrically conductive material;
• and
• forming a plurality of non-volatile memory cells, individual memory cells being formed by connecting an anti-fuse junction in series with a diode between a first conductive trace in the individual layer and a second conductive trace in the individual layer.