Micro device and method for fabricating the same
AssigneeTDK Corporation
InventorAkifumi Kamijima
Life of this patent
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Abstract
In a micro device including a thin film wiring structure composed of plural thin film conductors, the thin film conductors are arranged on a base so as to be separated from one another by an inorganic insulating film. The gap width α between adjacent thin film conductors is defined by a thickness of the inorganic insulating film. The gap width α is set smaller than a width β of each thin film conductor.
Claims19
A micro device comprising a thin film wiring structure composed of plural thin film conductors,
- said thin film conductors being arranged on a base so as to be separated from one another by an inorganic insulating film,
- a gap width α between adjacent thin film conductors being defined by a thickness of said inorganic insulating film,
- said gap width α being set smaller than a width β of each thin film conductor.
A method for fabricating a micro device, comprising the steps of:
- forming a first inorganic insulating film on a base,
- forming plural first thin film conductors on said first insulating film so as to be separated from one another by a given distance,
- removing portions of said first inorganic insulating film located in between said plural first thin film conductors,
- forming a second inorganic insulating film in a uniform thickness over said first thin film conductors and exposed portions of said base,
- and
- forming a second thin film conductor so as to embed gaps located between said first thin film conductors.
A method for fabricating a micro device, comprising the steps of:
- forming a first inorganic insulating film on a base,
- forming plural first thin film conductors on said first insulating film so as to be separated from one another by a given distance,
- forming a second inorganic insulating film in a uniform thickness over said first thin film conductors and said first inorganic insulating film,
- and
- forming a second thin film conductor so as to embed gaps located between said first thin film conductors.
A method for fabricating a micro device with a thin film coil, comprising the steps of:
- forming a first inorganic insulating film on a base,
- forming plural first thin film conductors on said first insulating film so as to be separated from one another in a predetermined direction by a given distance,
- removing portions of said first inorganic insulating film located in between said plural first thin film conductors,
- forming a second inorganic insulating film in a uniform thickness over said first thin film conductors and exposed portions of said base,
- and
- forming a second thin film conductor so as to embed gaps located between said first thin film conductors and to be electrically connected to said first thin film conductors.
A method for fabricating a micro device with a thin film coil, comprising the steps of:
- forming a first inorganic insulating film on a base,
- forming plural first thin film conductors on said first insulating film so as to be separated from one another in a predetermined direction by a given distance,
- forming a second inorganic insulating film in a uniform thickness over said first thin film conductors and said first inorganic insulating film,
- and
- forming a second thin film conductor so as to embed gaps located between said first thin film conductors and to be electrically connected to said first thin film conductors.
Dependencies are inferred from the claim text.