Photoelectric conversion element and solid-state image sensing device using the same

A solid-state image sensing device formed by alternately stacking photoelectric conversion regions of a first conductivity type and regions of a second conductivity type as a conductivity type opposite to the first conductivity type to form a multi-layered structure, comprising an array formed of:

• a plurality of first photoelectric conversion elements each of which photoelectrically converts light in first and second wavelength ranges;
• and
• a plurality of second photoelectric conversion elements each of which has a filter for intercepting light other than light in a third wavelength range on a surface thereof, and is partially formed below each first photoelectric conversion element,
• wherein each of the first and second photoelectric conversion elements has:
• a plurality of charge accumulation portions which are respectively formed in surface regions of the photoelectric conversion regions of the first conductivity type, and accumulate charges obtained by photoelectric conversion in the photoelectric conversion regions of the first conductivity type;
• and
• an output portion for converting charges transferred from the charge accumulation portions into electrical signals, and outputting the electrical signals.