Semiconductor integrated circuit device having logic circuit
AssigneeExploitation of Next Generation Co., Ltd.
InventorYutaka Arima
Life of this patent
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Abstract
An inverter circuit which is a representative example of the logic circuit includes a p-channel A-MOS transistor and an n-channel transistor. The gain coefficient β of the p-channel A-MOS transistor and n-channel transistor changes according to a voltage on a control gate. The control gate of the p-channel A-MOS transistor and n-channel MOS transistor is connected to an output node of the inverter circuit, and the normal MOS gate is connected to an input node of the inverter circuit. Thus, the ON resistance of the p-channel A-MOS transistor and n-channel transistor is automatically modulated to decrease as the source-drain voltage increases.
Claims10
A semiconductor integrated circuit device comprising a semiconductor logic circuit, said semiconductor logic circuit including a semiconductor device having a gain coefficient which is electrically modulatable in analogue manner.
A semiconductor integrated circuit device comprising a logic circuit providing, according to a result of a predetermined logical operation performed on an input which is at least one signal having one of a first level and a second level, one of said first level and said second level, to an output node,
- said logic circuit including a first field-effect transistor having a gain coefficient electrically modulatable in analogue manner, and
- said first field-effect transistor having a gate electrically connected between a first voltage corresponding to said first level and said output node and receiving one of (i) one of said at least one signal and (ii) a signal according to said at least one signal, transmitted to said gate.
Dependencies are inferred from the claim text.