Method and structure for providing improved thermal conduction for silicon semiconductor devices

A semiconductor structure formed in a silicon substrate comprising:

• a plurality of transistors each comprising a source region and a drain region formed in the silicon top layer and a gate formed over the source and drain regions;
• and
• a plurality of thermally conductive diamond sidewall spacers disposed at the sidewalls of each gate and contacting the source and drain regions.

A semiconductor structure formed in a silicon substrate comprising:

• a plurality of transistors each comprising a source region and a drain region formed in the silicon top layer and a gate formed over the source and drain regions;
• and
• a diamond insulation layer formed adjacent to the sidewalls of the gates of each of the plurality of transistors at the top surface of the silicon substrate.

A cooling structure for cooling a semiconductor transistor having a source region and a drain region formed in the top of a silicon substrate and a gate disposed on the top surface of the silicon substrate and contacting the source and drain regions comprising:

• a first diamond sidewall spacer formed on one sidewall of the gate and contacting the source region;
• and
• a second diamond sidewall spacer formed on a second sidewall of the gate and contacting the drain region.

A cooling structure for cooling at least one of a plurality of semiconductor devices formed in a substrate having a top silicon layer, a buried oxide layer underlying the top silicon layer, and a bulk silicon region underlying the buried oxide layer, comprising:

• a plurality of thermal trenches filled with thermally conductive and electrically nonconductive diamond, each trench extending from the top surface of the silicon top layer, through the buried oxide layer, and to the bulk silicon region and being in thermal contact with at least one of the devices.

A cooling structure for cooling at least one of a plurality of semiconductor devices formed on a silicon substrate comprising a diamond insulation layer disposed on the surface of said silicon substrate between adjacent devices.

A method for providing cooling with respect to at least one semiconductor device formed in a silicon substrate comprising the steps of:

• providing at least one diamond-filled trench adjacent to the at least one semiconductor device;
• and
• conducting heat from the at least one semiconductor device along the trench.

A method of forming a semiconductor device and cooling structure from a silicon substrate comprising the steps of:

• forming at least one device in the silicon;
• and
• forming diamond sidewall spacers at the sidewalls of each of said at least one device.

A method for fabricating a semiconductor structure in a silicon substrate, said structure having thermal cooling, comprising the steps of:

• forming a plurality of devices in said silicon substrate;
• and
• depositing a blanket layer of diamond over said devices.