High speed SOI transistors
AssigneeHoneywell International Inc.
InventorsMichael S. Liu, Shankar P. Sinha, Jane Kathleen Rekstad, Paul S. Fechner
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Abstract
An SOI GAA device is created by etching a buried oxide layer of an SOI wafer structure that is provided over a silicon substrate. A portion of the buried oxide layer remains over the silicon substrate after etching. A plurality of silicon fingers is formed so that the silicon fingers extend over the remaining buried oxide layer. A gate oxide is formed all around each of the silicon fingers, and a common silicon gate is formed all around all of the gate oxides. A common source and a common drain are formed by suitably doping opposite ends of the silicon fingers leaving a channel therebetween.
Claims30
A gate-all-around device comprising:
- a silicon substrate;
- an SOI structure over the silicon substrate, wherein the SOI structure includes a buried insulation layer;
- a plurality of silicon fingers extending over the buried insulation layer;
- a gate dielectric wrapped all around each of the silicon fingers;
- and,
- a gate silicon wrapped all around each of the gate dielectrics to form a common gate.
A method of forming an SOI GAA transistor comprising:
- etching a buried oxide layer of an SOI structure so that a portion of the buried oxide layer remains;
- forming a silicon finger extending over the portion of the buried oxide layer remaining after etching;
- forming a gate oxide all around the silicon finger;
- forming a silicon gate all around the gate oxide;
- and,
- forming a source and a drain in the silicon finger.
A method of forming an SOI GAA device comprising:
- etching a buried oxide layer of an SOI structure so that a portion of the buried oxide layer remains over a silicon substrate;
- forming a plurality of silicon fingers from a silicon layer of the SOI structure such that the silicon fingers are suspended over the remaining buried oxide layer;
- forming a gate oxide all around each of the silicon fingers;
- forming a common silicon gate all around all of the gate oxides;
- and,
- forming a common source and a common drain, wherein the common source and the common drain are formed on opposing ends of the silicon fingers.
Dependencies are inferred from the claim text.