III group nitride compound semiconductor ligh-emitting element
AssigneeToyoda Gosei Co., Ltd.
InventorsHiroshi Watanabe, Jun Ito, Shinya Asami, Naoki Shibata
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Abstract
In a group III nitride compound semiconductor light-emitting device, a light-emitting layer having a portion where an InGaN layer is interposed between AlGaN layers on both sides thereof is employed. By controlling the thickness, growth rate and growth temperature of InGaN layer which is a well layer and the thickness of AlGaN layer which is a barrier layer so that they are optimized, the output of the light-emitting device is enhanced.
Claims32
A group III nitride compound semiconductor light-emitting device which emits light having a wavelength of from 360 nm to 550 nm, comprising a light-emitting layer having a portion where an InGaN layer is interposed between AlGaN layers on both sides thereof.
A group III nitride compound semiconductor light-emitting device comprising an interlayer made of AlGaN having a growth temperature of from 865 to 905° C. and a light-emitting layer formed on said interlayer which emits light having a wavelength of from 360 to 550 nm from said light-emitting layer.
A group III nitride compound semiconductor light-emitting device comprising an interlayer made of AlGaN having an impurity concentration of 2×1016/cm3 or more and a light-emitting layer formed on said interlayer which emits light having a wavelength of from 360 to 550 nm from said light-emitting layer.
A group III nitride compound semiconductor light-emitting device comprising an interlayer made of AlGaN having a growth temperature of from 865 to 905° C. and an impurity concentration of 2×1016/cm3 or more and a light-emitting layer formed on said interlayer which emits light having a wavelength of from 360 to 550 nm from said light-emitting layer.
A group III nitride compound semiconductor light-emitting device which emits light having a wavelength of from 360 to 550 nm, comprising a light-emitting layer having a portion where an InGaN layer is interposed between AlGaN layers on both sides thereof wherein the sum of the thickness of one said InGaN layer and one said AlGaN layer laminated continuously on said InGaN layer is 10 nm or more.
Dependencies are inferred from the claim text.