Method of fabricating vertical structure leds

A method of producing semiconductor devices, comprising:

• growing a plurality of semiconductor layers on an insulating substrate;
• forming first ohmic contacts on the plurality of semiconductor layers;
• forming a metal support layer over the first ohmic contacts;
• removing the insulating substrate;
• and
• forming second ohmic contacts on the plurality of semiconductor layers.

A method of fabricating light emitting diodes, comprising:

• forming a GaN buffer layer on a sapphire substrate;
• forming an active layer on the GaN buffer layer;
• forming a GaN contact layer on the active layer;
• identifying the location of a plurality of individual light emitting diodes;
• forming a first ohmic contact on each individual light emitting diode;
• forming a metal support structure over the first ohmic contacts;
• removing the sapphire substrate;
• and
• forming a second ohmic contact on each individual light emitting diode.