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US 2003/0189208 A1Published application
Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
AssigneeApplied Materials, Inc.
InventorsKam Law, Quan-Yang Shang, William Reid Harshbarger, Dan Maydan
Life of this patent
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Abstract
A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.
Claims110
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- (a) providing a substrate having a dielectric layer formed over a gate metal layer;
- and
- (b) depositing one or more silicon layers on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reducing gas.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- (a) providing a substrate;
- (b) depositing one or more silicon layers on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reducing gas;
- and
- (c) forming a gate metal layer on at least one of the one or more silicon layers.
1 more element
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing one or more silicon layers on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reducing gas.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reducing gas, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reducing gas, and wherein at least one of the period of exposure the silicon-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reducing gas, wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration during each deposition cycle of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reducing gas, wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration, and wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration during one or more deposition cycles of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reducing gas, wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration during each deposition cycle of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reducing gas, wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration, and wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration during one or more deposition cycles of the cyclical deposition process.
A method of forming a silicon layer on a substrate, comprising:
- providing a substrate;
- and
- depositing one or more silicon layers on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reducing gas.
A transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- a substrate having one or more silicon layers formed thereon, wherein the one or more silicon layers are formed using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reducing gas.
Dependencies are inferred from the claim text.