Semiconductor element and display device using the same

A semiconductor element comprising:

• a semiconductor having an active layer;
• a gate insulating film in contact with the semiconductor;
• a gate electrode opposite to the active layer through the gate insulating film;
• a first nitride insulating film formed over the active layer;
• a photosensitive organic resin film formed over the first nitride insulating film;
• a second nitride insulating film formed over the photosensitive organic resin film;
• and a wiring provided on the second nitride insulating film,
• wherein a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, the first nitride insulating film and the second nitride insulating film are in contact with each other in a region of 0.3 μm to 3 μm in a bottom of the first opening portion, a second opening portion is provided in a laminate film including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

A semiconductor element comprising:

• a semiconductor having an active layer;
• a gate insulating film in contact with the semiconductor;
• a gate electrode opposite to the active layer through the gate insulating film;
• a first nitride insulating film formed over the active layer;
• a positive type photosensitive acrylic film formed over the first nitride insulating film;
• a second nitride insulating film formed over the positive type photosensitive acrylic film;
• and a wiring provided over the second nitride insulating film,
• wherein a first opening portion is provided in the positive type photosensitive acrylic film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

A semiconductor element comprising:

• a semiconductor having an active layer;
• a gate insulating film in contact with the semiconductor;
• a gate electrode opposite to the active layer through the gate insulating film;
• a first nitride insulating film formed over the active layer;
• a positive type photosensitive acrylic film formed over the first nitride insulating film;
• a second nitride insulating film formed over the positive type photosensitive acrylic film;
• and
• a wiring provided on the second nitride insulating film,
• wherein a first opening portion is provided in the positive type photosensitive acrylic film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, the first nitride insulating film and the second nitride insulating film are in contact with each other in a region of 0.3 μm to 3 μm in a bottom of the first opening portion, a second opening portion is provided in a laminate film including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

A display device comprising a pixel portion including a plurality of pixels in each of which a semiconductor element and a storage capacitor connected with the semiconductor element are provided on a substrate,

• wherein the semiconductor element includes:
• a semiconductor having an active layer;
• a gate insulating film which is in contact with the semiconductor;
• a gate electrode opposite to the active layer through the gate insulating film;
• a first nitride insulating film formed over the active layer;
• a photosensitive organic resin film formed on the first nitride insulating film;
• a second nitride insulating film formed on the photosensitive organic resin film;
• and a wiring provided on the second nitride insulating film, a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and
• wherein the storage capacitor includes the first nitride insulating film and the second nitride insulating film as dielectrics.

A display device comprising a-pixel portion including a plurality of pixels in each of which a semiconductor element and a storage capacitor connected with the semiconductor element are provided on a substrate,

• wherein the semiconductor element includes:
• a semiconductor having an active layer;
• a gate insulating film which is in contact with the semiconductor;
• a gate electrode opposite to the active layer through the gate insulating film;
• a first nitride insulating film formed over the active layer;
• a photosensitive organic resin film formed on the first nitride insulating film;
• a second nitride insulating film formed on the photosensitive organic resin film;
• and a wiring provided on the second nitride insulating film, a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, the first nitride insulating film and the second nitride insulating film are in contact with each other in a region of 0.3 μm to 3 μm in a bottom of the first opening portion, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and
• wherein the storage capacitor includes the first nitride insulating film and the second nitride insulating film as dielectrics.

A display device comprising a pixel portion including a plurality of pixels in each of which a semiconductor element and a storage capacitor connected with the semiconductor element are provided on a substrate,

• wherein the semiconductor element includes:
• a semiconductor having an active layer;
• a gate insulating film which is in contact with the semiconductor;
• a gate electrode opposite to the active layer through the gate insulating film;
• a first nitride insulating film formed over the active layer;
• a positive type photosensitive acrylic film formed on the first nitride insulating film;
• a second nitride insulating film formed on the positive type photosensitive acrylic film;
• and a wiring provided on the second nitride insulating film, a first opening portion is provided in the positive type photosensitive acrylic film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and
• wherein the storage capacitor includes the first nitride insulating film and the second nitride insulating film as dielectrics.

A display device comprising a pixel portion including a plurality of pixels in each of which a semiconductor element and a storage capacitor connected with the semiconductor element are provided on a substrate,

• wherein the semiconductor element includes:
• a semiconductor having an active layer;
• a gate insulating film which is in contact with the semiconductor;
• a gate electrode opposite to the active layer through the gate insulating film;
• a first nitride insulating film formed over the active layer;
• a positive type photosensitive acrylic film formed on the first nitride insulating film;
• a second nitride insulating film formed on the positive type photosensitive acrylic film;
• and a wiring provided on the second nitride insulating film, a first opening portion is provided in the positive type photosensitive acrylic film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, the first nitride insulating film and the second nitride insulating film are in contact with each other in a region of 0.3 μm to 3 μm in a bottom of the first opening portion, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and
• wherein the storage capacitor includes the first nitride insulating film and the second nitride insulating film as dielectrics.

A method of manufacturing a semiconductor element comprising the steps of:

• forming a semiconductor having an active layer;
• forming a gate insulating film in contact with the semiconductor;
• forming a gate electrode opposite to the active layer through the gate insulating film;
• forming a first nitride insulating film formed over the active layer;
• forming a photosensitive organic resin film formed over the first nitride insulating film;
• forming a first opening portion in the photosensitive organic resin film;
• forming a second nitride insulating film over the photosensitive organic resin film and the first opening portion;
• forming a second opening portion in the gate insulating film, the first nitride insulating film and the second nitride insulating film inside the first opening portion;
• and
• forming a wiring provided over the second nitride insulating film in contact with the semiconductor film through the first opening portion and the second opening portion.

A method of manufacturing a semiconductor element comprising the steps of:

• forming a semiconductor having an active layer;
• forming a gate insulating film in contact with the semiconductor;
• forming a gate electrode opposite to the active layer through the gate insulating film;
• forming a first nitride insulating film formed over the active layer;
• forming a photosensitive organic resin film formed over the first nitride insulating film;
• forming a first opening portion in the photosensitive organic resin film;
• forming a second nitride insulating film over the photosensitive organic resin film and the first opening portion;
• forming a second opening portion in the gate insulating film, the first nitride insulating film and the second nitride insulating film inside the first opening portion;
• and
• forming a wiring provided over the second nitride insulating film in contact with the semiconductor film through the first opening portion and the second opening portion,
• wherein the first insulating film and the second insulating film are in contact with each other in a region of 0.3 μm to 3 μm in a bottom of the first opening portion.

A method of manufacturing a semiconductor element comprising the steps of:

• forming a semiconductor having an active layer;
• forming a gate insulating film in contact with the semiconductor;
• forming a gate electrode opposite to the active layer through the gate insulating film;
• forming a first nitride insulating film formed over the active layer;
• forming a positive type photosensitive organic resin film formed over the first nitride insulating film;
• forming a first opening portion in the positive type photosensitive organic resin film;
• forming a second nitride insulating film over the positive type photosensitive organic resin film and the first opening portion;
• forming a second opening portion in the gate insulating film, the first nitride insulating film and the second nitride insulating film inside the first opening portion;
• and
• forming a wiring provided over the second nitride insulating film in contact with the semiconductor film through the first opening portion and the second opening portion.

A method of manufacturing a semiconductor element comprising the steps of:

• forming a semiconductor having an active layer;
• forming a gate insulating film in contact with the semiconductor;
• forming a gate electrode opposite to the active layer through the gate insulating film;
• forming a first nitride insulating film formed over the active layer;
• forming a positive type photosensitive organic resin film formed over the first nitride insulating film;
• forming a first opening portion in the positive type photosensitive organic resin film;
• forming a second nitride insulating film over the positive type photosensitive organic resin film and the first opening portion;
• forming a second opening portion in the gate insulating film, the first nitride insulating film and the second nitride insulating film inside the first opening portion;
• and
• forming a wiring provided over the second nitride insulating film in contact with the semiconductor film through the first opening portion and the second opening portion,
• wherein the first insulating film and the second insulating film are in contact with each other in a region of 0.3 μm to 3 μm in a bottom of the first opening portion.