Method of manufacturing thin film transistor

A process of manufacturing a thin-film transistor, comprising steps of:

• (1) forming an amorphous silicon layer at the upper part of a glass substrate;
• (2) implanting an element belonging to Group IIIb or an element belonging to Group Vb, into the amorphous silicon layer;
• (3) irradiating the amorphous silicon layer by laser light to form a polycrystalline silicon layer;
• (4) oxidizing a surface of the polycrystalline silicon layer at a temperature of 500° C. or below to form a first insulating layer;
• (5) forming a second insulating layer on the first insulating layer;
• (6) forming a gate region on the second insulating layer;
• (7) implanting an element belonging to Group IIIb or an element belonging to Group Vb, into a source region and a drain region by ion implantation, using the gate region as a mask;
• and
• (8) forming an interlaminar insulating layer to cover the gate region, and thereafter forming corresponding electrodes so as to provide electrical interconnection with the source region, the drain region and the gate region.