Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same

An electron beam exposure apparatus for forming a desired pattern by independently controlling emission of a plurality of electron beams so as to fall on a specimen via a projection optical system including a deflector, comprising:

• a memory for storing pattern data of said desired pattern to be formed by each of said plurality of electron beams;
• a shift amount computing circuit for computing a positional shift amount of pattern data of a pattern formed by each of said plurality of electron beams from the pattern data of said desired pattern;
• and
• deflection control means for deflecting each of said plurality of electron beams in accordance with said positional shift amount.

An electron beam exposure apparatus for forming a desired pattern by independently controlling emission of a plurality of electron beams so as to fall on a specimen via a projection optical system including a deflector, comprising:

• a memory for storing pattern data of a third region obtained by adding a second region corresponding to a deflection region margin to the periphery of a first region including said desired pattern to be formed by each of said plurality of electron beams;
• a shift amount computing circuit for computing a positional shift amount of pattern data of a pattern formed by each of said plurality of electron beams in said third region from the pattern data of said desired pattern;
• and
• deflection control means for deflecting each of said plurality of electron beams in accordance with said positional shift amount in the range of said third region.