Imaging array and methods for fabricating same

A radiation detector comprising:

• a top gate thin film transistor (TFT) comprising a source electrode, a drain electrode, a gate electrode, an amorphous silicon layer, a first dielectric layer approximately 400 angstroms (Å) thick, a second dielectric layer approximately 2100 Å thick, said second dielectric layer extending over a surface of said first dielectric layer;
• a capacitor comprising a first electrode, a second electrode, and a dielectric layer, said capacitor dielectric layer formed unitarily with said TFT second dielectric layer, and wherein said source electrode, said drain electrode, and at least one of said capacitor electrodes comprise Indium Tin Oxide, and wherein said first dielectric layer and said second dielectric layer comprise silicon nitride;
• a diode electrically coupled to said capacitor, said diode comprising a diode stack, and a diode top contact;
• a data line formed unitarily with a drain via, said drain via electrically coupled to said drain electrode;
• a scan line formed unitarily with said gate electrode;
• and
• a common line formed unitarily with a common via, said common via electrically coupled to said diode top contact.

A method for fabricating a radiation detector comprising:

• forming a top gate thin film transistor (TFT) comprising a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, the second dielectric layer extending over a surface of the first dielectric layer, and wherein the first dielectric layer and the second dielectric layer comprise silicon nitride;
• forming an amorphous silicon layer, wherein the first dielectric layer is extending over a surface of the amorphous silicon layer, the gate electrode is extending over a surface of the second dielectric layer and the second dielectric layer is thicker than the first dielectric layer.
• forming a capacitor comprising at least two electrodes and a dielectric layer, said capacitor dielectric layer formed unitarily with said TFT second dielectric layer;
• forming a diode electrically coupled to the capacitor, the diode comprising a diode stack and a diode top contact;
• forming a drain via formed unitarily with a data line, the drain via electrically coupled to the drain electrode;
• forming the gate electrode formed unitarily with a scan line;
• and
• forming a common via formed unitarily with a common line, the common via electrically coupled to the drain electrode.

An imaging system comprising a radiation source, and a radiation detector, wherein said radiation detector comprises:

• a top gate thin film transistor (TFT) comprising a source electrode, a drain electrode, a gate electrode, an amorphous silicon layer, a first dielectric layer approximately 400 angstroms (Å) thick, a second dielectric layer approximately 2100 Å thick, said second dielectric layer extending over a surface of said first dielectric layer;
• a capacitor comprising a first electrode, a second electrode, and a dielectric layer, said capacitor dielectric layer formed unitarily with said TFT second dielectric layer, and wherein said source electrode, said drain electrode, and at least one of said capacitor electrodes comprise Indium Tin Oxide, and wherein said first dielectric layer and said second dielectric layer comprise silicon nitride;
• a diode electrically coupled to said capacitor, said diode comprising a diode stack, and a diode top contact;
• a data line formed unitarily with a drain via, said drain via electrically coupled to said drain electrode;
• a scan line formed unitarily with said gate electrode;
• and
• a common line formed unitarily with a common via, said common via electrically coupled to said diode top contact.