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US 2003/0173584 A1Published application
Semiconductor integrated circuit device and method of fabricating the same
AssigneeFujitsu Quantum Devices Limited
InventorJunichiro Nikaido
Life of this patent
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Abstract
A semiconductor integrated circuit device includes a semiconductor layer on a substrate, a first gate electrode formed on the semiconductor layer, and a second gate electrode that is formed on the semiconductor layer and is adjacent to a sidewall of the first gate electrode along a channel length. The first and second gate electrodes have different work functions.
Claims19
A semiconductor integrated circuit device comprising:
- a semiconductor layer on a substrate;
- a first gate electrode formed on the semiconductor layer;
- and
- a second gate electrode that is formed on the semiconductor layer and is adjacent to a sidewall of the first gate electrode along a channel length,
- the first and second gate electrodes having different work functions.
2 more elements
A method of fabricating a semiconductor integrated circuit device comprising the steps of:
- (a) forming a mask on a semiconductor layer provided on a substrate so that the mask has an overhang portion that extends along a channel length;
- (b) depositing a first gate electrode material via the mask;
- (c) depositing a second gate electrode material on the semiconductor layer so as to be adjacent to a sidewall of the first gate electrode material, the second gate electrode material having a work function different from that of the first gate electrode material.
Dependencies are inferred from the claim text.