Washing liquid composition for semiconductor substrate
AssigneesKanto Kagaku Kabushiki Kaisha, NEC Electronics Corporation
InventorsYumiko Abe, Norio Ishikawa, Hidemitsu Aoki, Hiroaki Tomimori, Yoshiko Kasama
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Abstract
There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.
Claims10
A washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition comprising:
- an aliphatic polycarboxylic acid;
- and
- a surfactant;
- wherein the washing liquid composition has a contact angle of at most 50 degrees when dropped on the semiconductor substrate.
A washing liquid composition for a semiconductor substrate having a low permittivity (Low-K) film, the washing liquid composition comprising:
- an aliphatic polycarboxylic acid;
- and
- one type or two or more types of surfactant chosen from the group consisting of a polyoxyalkylene alkyl ether type nonionic surfactant, a polyoxyalkylene alkylphenyl ether type nonionic surfactant, an alkylbenzenesulfonic acid type anionic surfactant and a salt thereof, an alkylphosphate ester type anionic surfactant, a polyoxyalkylene alkylphenyl ether sulfonic acid type anionic surfactant and a salt thereof, a polyoxyalkylene alkyl ether sulfonic acid type anionic surfactant and a salt thereof, and a fluorosurfactant.
A method for washing a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, wherein a washing liquid composition comprising:
- an aliphatic polycarboxylic acid;
- and
- a surfactant;
- and
- having a contact angle of at most 50 degrees when dropped on the semiconductor substrate, is applied to said substrate.
A method for washing a semiconductor substrate having a low permittivity (Low-K) film, wherein a washing liquid composition comprising:
- an aliphatic polycarboxylic acid;
- and
- one type or two or more types of surfactant chosen from the group consisting of a polyoxyalkylene alkyl ether type nonionic surfactant, a polyoxyalkylene alkylphenyl ether type nonionic surfactant, an alkylbenzenesulfonic acid type anionic surfactant and a salt thereof, an alkylphosphate ester type anionic surfactant, a polyoxyalkylene alkylphenyl ether sulfonic acid type anionic surfactant and a salt thereof, a polyoxyalkylene alkyl ether sulfonic acid type anionic surfactant and a salt thereof, and a fluorosurfactant, is applied to said substrate.
Dependencies are inferred from the claim text.