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AssigneeRenesas Technology Corp.
InventorsShimpei Tsujikawa, Toshiyuki Mine, Jiro Yugami, Hirotaka Hamamura
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Disclosed is a method of improving smoothness on a surface of a gate dielectric composed of a high dielectric film made of metal oxide. A dielectric film with a high permittivity made of metal oxide such as a TiO2 film or a ZrO2 film having an amorphous structure is deposited over a silicon substrate by the plasma enhanced chemical vapor deposition method, and the film is used as a gate dielectric. Since the gate dielectric has good surface smoothness, simultaneous reductions of both the film thickness of a gate dielectric and the gate leakage current can be achieved. In addition, it is also possible to reduce the variation in the characteristics of the devices.
A method of manufacturing a semiconductor device, said semiconductor device comprising:
A method of manufacturing a semiconductor device, said semiconductor device comprising:
A method of manufacturing a semiconductor device, said semiconductor device comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.