Deposition method of dielecrtric films having a low dielectric constant
AssigneeSTMicroelectronics S.r.I.
InventorMichele Vulpio
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Abstract
A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.
Claims10
Deposition of dielectric films having a low dielectric constant on a surface of a semiconductor material substrate, through CVD (Chemical Vapor Deposition) techniques which provide for the use of a class of precursor compounds, characterised in that said precursor compounds are oxygenated organosilanes.
Low-dielectric-constant film deposited on a surface of a substrate made of semiconductor material, through CVD (Chemical Vapor Deposition) deposition techniques, that provide for the use of a class of monomeric precursor compounds, characterized in that it has a polymeric structure containing monomeric units
- 3
- wherein Ar is an optionally substituted benzene ring and R2 and R3 are independently C1-4 alkyl, (optionally substituted) aromatic ring in place of the O—Ar bond.
Dependencies are inferred from the claim text.