Low resistivity copper conductor line, liquid crystal display device having the same and method for forming the same

A method for forming a low resistivity copper conductive line for a liquid crystal display (LCD) device, comprising:

• forming a silicon layer on a substrate;
• forming a silver layer on the silicon layer using a deposition process;
• patterning the silver layer into a first shape;
• and forming a copper layer on the silver layer by an electroplating process using the silver layer as a seed layer.

A method for forming a low resistivity copper conductive line for a semiconductor element, comprising:

• forming a silver thin film on a silicon layer by depositing silver on the silicon layer;
• patterning the silver thin film into a first shape;
• and
• forming a copper thin film on the silver thin film by an electroplating process using the silver thin film as a seed layer.

A method for fabricating an array substrate of a liquid crystal display device, comprising:

• forming a first silver thin film by depositing and patterning silver on a substrate;
• forming a copper thin film on the first silver thin film by an electroplating process using the first silver thin film as a seed layer to form a gate line and gate electrode;
• forming a gate insulating layer on an entire surface of the substrate;
• forming an active layer and an ohmic contact layer sequentially on the gate insulating layer;
• forming a second silver thin film by depositing and patterning silver on the substrate;
• forming a copper thin film on the second silver thin film by an electroplating process using the second silver thin film as a seed layer to form a data line, and source and drain electrodes;
• forming a passivation layer an entire surface of the substrate;
• patterning the passivation layer to expose a portion of the drain electrode;
• and
• forming a pixel electrode on the passivation layer to electrically contact the drain electrode.