Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the method
AssigneeHitachi High-Technologies Corporation
InventorsNobuyuki Mise, Ken Yoshioka, Ryoji Nishio, Tatehito Usui
Life of this patent
Estimating the term…
Abstract
A film of hardly-etched material formed on a substrate is etched using a mask formed on the film of hardly-etched material and a plasma, wherein the film of hardly-etched material is etched using the mask formed with a side wall angled at 90 degrees or less with respect to the surface of the substrate, thereby forming the etched film with a taper angle to the surface of the substrate equal to or larger than the taper angle of the mask.
Claims21
A plasma-based method of etching a film of hardly-etched material formed on a substrate using said film and a mask formed on said hardly-etched film, said method comprising the step of:
- etching said film of hardly-etched material using said mask having a side wall angled at 90 degrees or less with respect to the surface of said substrate.
A plasma-based method of etching a film of hardly-etched material formed on a substrate using said film and a mask formed on said hardly-etched film, said method comprising the step of:
- etching said film of hardly-etched material using said mask having a side wall formed with a taper angle of less than 90 degrees with respect to the surface of said substrate, to form said etched film with a taper angle with respect to the surface of said substrate equal to or larger than the taper angle of said mask.
A plasma-based method of etching a film of hardly-etched material formed on a substrate using said film and a mask formed on said hardly-etched film, said method comprising the steps of:
- forming said mask such that a side wall of sad mask has a taper angle to the surface of said substrate less than 90 degrees;
- and
- etching said film of hardly-etched material using said mask.
A method of fabricating a semiconductor device using at least one layer of hardly-etched material formed on a substrate, and a mask formed on said hardly-etched film, said method comprising the steps of:
- etching said layer of hardly-etched material using said mask;
- washing out an etching product in the middle of the etching;
- and
- again etching said layer of hardly-etched material using said mask.
An etching method for attaching a reaction product on a wall of an etching apparatus, comprising the step of:
- continuously attaching said reaction product to the wall of said etching apparatus until at least one wafer has been processed, such that an etched material formed on a substrate has a side wall angled substantially at 90 degrees with respect to the surface of said substrate.
A method of etching a material under processing using a semiconductor device fabricating apparatus comprising a wafer carrier, a plurality of processing chambers and a plurality of post-processing chambers connected to said wafer carrier, a plurality of lock chambers, and an atmosphere carrier located adjacent to said lock chambers, wherein said atmosphere carrier can be connected to said plurality of lock chambers, and a wafer cassette adjacent to said atmosphere carrier, said method comprising the steps of:
- etching the material under processing in one of said plurality of processing chambers;
- post-processing the material under processing in one of said plurality of post-processing chambers;
- etching the material in one of said plurality of processing chambers;
- and
- post-processing the material under processing in one of said plurality of post-processing chambers.
A method of etching a material under processing using a semiconductor device fabricating apparatus comprising a wafer carrier, a plurality of processing chambers connected to said wafer carrier, a plurality of lock chambers, and an atmosphere carrier located adjacent to said lock chambers, wherein said atmosphere carrier can be connected to said plurality of lock chambers, a post-processing chamber adjacent to said atmosphere carrier, and a wafer cassette adjacent to said atmosphere carrier, said method comprising the steps of:
- etching the material under processing in one of said plurality of processing chambers;
- post-processing the material under processing in said post-processing chamber;
- etching the material in one of said plurality of processing chambers;
- and
- post-processing the material under processing in said post-processing chamber.
A plasma-based method of etching a film formed of any of Pt, Ru, Ir, PZT, SBT, Co, Mn and Fe on a substrate, using said mask and a hard mask formed on said film, said method comprising the step of:
- etching said film using said hard mask, said hard mask having a side wall angled at less than 80 degrees with respect to a surface of said substrate.
Dependencies are inferred from the claim text.