Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates

A plasma enhanced chemical vapor deposition method of forming titanium suicide comprising layers over a plurality of semiconductor substrates, comprising:

• first cleaning a plasma enhanced chemical vapor deposition chamber at room ambient pressure;
• after the first cleaning, chemical vapor depositing an elemental titanium comprising layer over internal surfaces of the chamber while no semiconductor substrate is received within the chamber;
• after depositing the elemental titanium comprising layer over internal surfaces of the chamber, plasma enhanced chemical vapor depositing titanium silicide comprising layers on a plurality of semiconductor substrates within the chamber using at least TiCl4 and a silane;
• and
• after depositing the titanium silicide comprising layers on the semiconductor substrates, second cleaning the chamber at ambient room pressure.

A plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers over a plurality of semiconductor substrates, comprising:

• first cleaning a plasma enhanced chemical vapor deposition chamber at room ambient pressure;
• after the first cleaning, chemical vapor depositing a titanium silicide comprising layer over internal surfaces of the chamber while no semiconductor substrate is received within the chamber;
• after depositing the titanium silicide comprising layer over internal surfaces of the chamber, plasma enhanced chemical vapor depositing titanium silicide comprising layers on a plurality of semiconductor substrates within the chamber using at least TiCl4 and a silane;
• and
• after depositing the titanium silicide comprising layers on the semiconductor substrates, second cleaning the chamber at ambient room pressure.