Method for forming film
AssigneeTokyo Electron Limited
InventorsHotaka Ishizuka, Tsukasa Matsuda
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Abstract
In a deposition method according to the present invention, a substrate (10) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4 gas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST2). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST3). By carrying out the initiation step (ST2) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition.
Claims14
A deposition method for forming a film on a substrate, said method comprising:
- a step of arranging a substrate in a processing vessel;
- a pretreating step of supplying an Si-containing gas into said processing vessel to pretreat said substrate;
- and
- a deposition step of supplying a deposition gas into said processing vessel to form a film on the pretreated substrate,
- said pretreating step being carried out at a partial pressure of said Si-containing gas of not less than 100 Pa.
A deposition method for forming a film on a substrate, said method comprising:
- a step of arranging a substrate in a processing vessel;
- a pretreating step of supplying an Si-containing gas into said processing vessel to pretreat said substrate;
- a preheating step of preheating the pretreated substrate in said processing vessel;
- and
- a deposition step of supplying a deposition gas into said processing vessel to form a film on the preheated substrate,
- said pretreating step being carried out at a partial pressure of said Si-containing gas of not less than 50 Pa.
A deposition method for forming a film on a substrate, said method comprising:
- a step of arranging a substrate in a processing vessel;
- a pretreating step of supplying an SiH4 gas into said processing vessel to pretreat said substrate;
- and
- a deposition step of supplying a deposition gas into said processing vessel to form a W thin film on the pretreated substrate,
- said pretreating step being carried out at a partial pressure of said SiH4 gas of not less than 100 Pa.
A deposition method for forming a film on a substrate, said method comprising:
- a step of arranging a substrate in a processing vessel;
- a pretreating step of supplying an SiH4 gas into said processing vessel to pretreat said substrate;
- a preheating step of preheating the pretreated substrate in said processing vessel;
- and
- a deposition step of supplying a deposition gas into said processing vessel to form a W thin film on the preheated substrate,
- said pretreating step being carried out at a partial pressure of said SiH4 gas of not less than 50 Pa.
Dependencies are inferred from the claim text.