Method of applying cladding material on conductive lines of MRAM devices

A method of fabricating a cladding region for use in a magnetoresistive memory device comprising the steps of:

• providing a conductive line formed of conductive material and positioned proximate to a magnetoresistive memory device;
• displacement plating a first barrier layer on the conductive line;
• using an electrochemical deposition bath, forming a flux concentrating layer on the first barrier layer;
• and
• displacement plating a second barrier layer on the flux concentrating layer.

A method of fabricating a cladding region for use in a magnetoresistive memory device comprising the steps of:

• forming a magnetoresistive random access memory device with a surface;
• forming a dielectric layer overlying the magnetoresistive random access memory device;
• forming a trench through the dielectric layer adjacent to the magnetoresistive random access memory device;
• forming sidewall spacers of one of a cladding material, or a combination of a cladding material and a barrier material, in the trench;
• forming a conductive line of conductive material in the trench, using the sidewall spacers, with an upper surface of the conductive line exposed;
• immersing the exposed upper surface of the conductive line for a time in a first ion bath containing dissolved ions of a first conductive material to form a first barrier layer on the exposed upper surface of the conductive line;
• and
• immersing the first barrier layer for a time in an electroless plating bath to form a flux concentrating layer on the first barrier layer.